Comparison ledger
Applied Materials Centura eMXP+, Oxford Instruments 100 ICP Fluorine, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | Centura eMXP+Applied Materials | 100 ICP FluorineOxford Instruments |
|---|---|---|
| OEM | Applied Materials | Oxford Instruments |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Applied Materials Centura | Oxford Instruments 100 ICP Fluorine |
| Specifications | ||
| Configuration | Oxide[1] | — |
| Software Version | E4.8_26[1] | — |
| Voltage | 208 VAC[1] | — |
| Full load current | 240A[1] | — |
| Frequency | 50/60 Hz[1] | — |
| Process | Nitride Spacer[1] | — |
| Wafer size | 8 inch[1] | 4 inch, 6 inch, 8 inch (with clamp change)[2] |
| Robot | HP+ Robot[1] | — |
| Excludes | LPT, Chiller, Dry Pump[1] | — |
| Etch Gases | — | SF6, CF4, O2, Ar, N2, CHF3, C4F8[2] |
| Cryo DRIE etch rate | — | up to 5 µm/min[2] |
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