Waferpedia

Comparison ledger

NV GSD VHEversus0216 7696, E 11368072 ESC

Axcelis NV GSD VHE, Varian 0216 7696, E 11368072 ESC, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
NV GSD VHEAxcelis
OEMAxcelisVarian
CategoryIon ImplantationIon Implantation
Wafer sizeWafer tilt—
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyAxcelis NV GSD VHEVarian 0216 7696, E 11368072 ESC
Specifications
Wheel typeFull disk 17 wafers[1]—
Wafer sizeWafer tilt[1]—
SourceBernas[1]—
Extraction systemTriple axes[1]—
GasesArsenic, Boron, Phosphine (SDS), all bottles removed. There is also present plumbing for one Xe bottle.[1]—
ConfigurationSDS Gas box[1]Platen ADV-S Type[3]
Max implantation energy (in KeV)4.2 MeV (14 resonator configuration).[1]—
Max Extraction voltage (in KeV)90[1]—
Orienter typeflat[1]—
Hydrogen implantation availableno[1]—
PFSHD[1]—
Software version5.6[2]—
Type—ESC Platen ADV-S Type[3]
Category—Ion Implantation[4]

Plan your fab

Building a Ion Implantation process? Get a complete equipment list.

Open the fab equipment planner →
Sources (4)Every fact above is drawn from these public sources
  1. [1]inventory listing
  2. [2]inventory listing
  3. [3]inventory listing
  4. [4]waferpedia.comwaferpedia.com