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Comparison ledger

2200 evo advancedversus101-149-053 Gold Booster

Besi 2200 evo advanced, Branson 101-149-053 Gold Booster, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
OEMBesiBranson
CategoryPackaging & BondingPackaging & Bonding
Wafer size——
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyBesi 2200 evo advancedBranson 101-149-053 Gold Booster
Cited variants
  • Datacon 2200 evo[1]
—
Specifications
TypeG4[2]Gold Booster[6]
Voltage400 VAC[2]—
Phase3 Phase[2]—
Power2.3 kVA[2]—
Max Current3.3 A[2]—
Main BreakerD16 A[2]—
SCCR5 kA[2]—
Vacuum-0.08 MPa[2]—
Compressed Air0.60 MPa[2]—
Nitrogen0.10 MPa[2]—
Weight1,500 kg[2]—
X/Y placement accuracy± 3 µm @ 3s[3]—
Theta placement accuracy± 0.07° @ 3s[3]—
Bond force range0.5N to 25N[3]—
UPH die attachup to 7,000 UPH/module[3]—
UPH flip chip with dippingup to 2,500 UPH/module[3]—
UPH flip chip without dippingup to 3,200 UPH/module[3]—
Machine dimensions (L x D x H)1,160 mm x 1,225 mm x 1,750 mm[3]—
Uptime> 98 %[3]—
Yield> 99.95 %[3]—
Die size die attach0.15 mm - 30 mm[3]—
Die size flip chip0.5 mm - 30 mm[3]—
Die thickness>50 µm (thinner on request)[3]—
Wafer size4" - 12" (SEMI M1)[3]—
Frame sizesFF070, FF105, FF108, FF123[3]—
Substrate working range13" x 8" (325 mm x 200 mm)[3]—
Heated bond head max temperature450°C[3]—
UV curing powerup to 2,000 mW/cm2 (365 / 405 nm)[3]—
Bond rotation0° - 360°[3]—
Number of pickup tools/nozzlesup to 14[3]—
Number of eject tools5[3]—
Number of epoxies/adhesives in single pass3[3]—
Bond force0.5 N – 25 N programmable[3]—
Machine dimensions (LxDxH)1,160 mm x 1,225 mm x 1,750 mm[3]—
Flip chip die size0.5 mm – 30 mm[3]—
Heated bond head (optional)up to 450 °C[3]—
UV curing (optional)up to 2,000 mW/cm² (365/405 nm)[3]—
Supply voltage400 VAC, 3 phase, 50/60 Hz, 2.3 kVA[2]—
Configuration—1:1.5[5]
Manufacturer—Branson[6]
Model—101-149-053[6]
Operating frequency—20 kHz[7]
Gain—1:1.5[6]
Mounting thread—1/2-20[7]
Length—5.4 in[7]
Gain ratio—1:1.5[6]

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Sources (7)Every fact above is drawn from these public sources
  1. [1]besi.combesi.com
  2. [2]inventory listing
  3. [3]besi.combesi.com
  4. [4]semiconductor.directorysemiconductor.directory
  5. [5]inventory listing
  6. [6]waferpedia.comwaferpedia.com
  7. [7]nextdayautomation.comnextdayautomation.com