Waferpedia

Comparison ledger

100versus620 Mask

CEE 100, EV Group 620 Mask, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
100CEE
620 MaskEV Group
OEMCEEEV Group
CategoryLithographyLithography
Wafer size6"3 Station Wafer Handler
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyCEE 100EV Group 620
Cited variants—
Specifications
Tool typeSpray Developer[1]—
Accepts wafer sizeup to 6" wafers[2]—
Programmable programs10 programs[2]—
Steps per programup to 10 steps[2]—
Programmable step parametersAcceleration, Speed, Time[2]—
Associated documentCEE Model 100CB Spinner.doc[2]—
Wafer sizeUp to 6 inches[2]4 inch[3]
Programs10 programs each with up to 10 steps[2]—
Control parametersAcceleration, Speed, Time[2]—
Voltage—200 V[3]
Phase—2 Phase[3]
Configuration—50 / 60 Hz[3]
Current Rating—10 A[3]
Interrupting Capability—50 kiloamps[3]
Overcurrent Protection—Provided at machine terminals[3]
Frequency—50/60 Hz[4]
Power consumption—1.55 kW[4]
Full load current rating—7.45 A[4]
Largest current rating—7.45 A[4]
Breaker size / AIC—10 A / 10 kA[4]
Compressed Air (CDA)—6 bar / 87 psi[4]
Nitrogen or CDA—6 bar / 87 psi[4]
Vacuum—< 850 mbar / 6460 torr[4]
Wafer Sizes—2, 3, 4, 5, 6, 12 inch[4]
Backside Alignment—Capable[5]
Infrared Alignment—Capable[5]
Chuck Size—5 inch to 6 inch[5]
OEM—EV Group[3]
Model—620 Mask[3]
Equipment type—Mask Aligner[3]
Category—Lithography[3]

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Sources (6)Every fact above is drawn from these public sources
  1. [1]nanofab.ece.cmu.edunanofab.ece.cmu.edu
  2. [2]nanofab.utah.edunanofab.utah.edu
  3. [3]inventory listing
  4. [4]inventory listing
  5. [5]inventory listing
  6. [6]inventory listing