Comparison ledger
CEE 100, Nikon NSR-1505G4, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 100CEE | NSR-1505G4Nikon |
|---|---|---|
| OEM | CEE | Nikon |
| Category | Lithography | Lithography |
| Wafer size | 6" | 4" |
| Process node | — | better than 750 nm resolution; better than 150 nm alignment |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | g-line |
| Family | CEE 100 | Nikon NSR-1505G4 |
| Cited variants |
| — |
| Specifications | ||
| Tool type | Spray Developer[1] | — |
| Accepts wafer size | up to 6" wafers[2] | — |
| Programmable programs | 10 programs[2] | — |
| Steps per program | up to 10 steps[2] | — |
| Programmable step parameters | Acceleration, Speed, Time[2] | — |
| Associated document | CEE Model 100CB Spinner.doc[2] | — |
| Wafer size | Up to 6 inches[2] | 4" wafers[3] |
| Programs | 10 programs each with up to 10 steps[2] | — |
| Control parameters | Acceleration, Speed, Time[2] | — |
| Type | — | Wafer stepper[3] |
| Reduction | — | 5x reduction[3] |
| Reticle size | — | 5" reticle[3] |
| Exposure source | — | g-line UV[3] |
| Resolution | — | better than 750 nm[3] |
| Alignment | — | better than 150 nm[3] |
| Reduction factor | — | 5x[3] |
| Alignment accuracy | — | better than 150 nm[3] |
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