Comparison ledger
CEE 100, SUSS MicroTec MA6/MA4, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 100CEE | MA6/MA4SUSS MicroTec |
|---|---|---|
| OEM | CEE | SUSS MicroTec |
| Category | Lithography | Lithography |
| Wafer size | 6" | wafers up to 4″ (MA4) or 6″ (MA6); also 1 cm² pieces |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | CEE 100 | SUSS MicroTec MA6/MA4 |
| Cited variants |
| |
| Specifications | ||
| Tool type | Spray Developer[1] | — |
| Accepts wafer size | up to 6" wafers[3] | — |
| Programmable programs | 10 programs[3] | — |
| Steps per program | up to 10 steps[3] | — |
| Programmable step parameters | Acceleration, Speed, Time[3] | — |
| Associated document | CEE Model 100CB Spinner.doc[3] | — |
| Wafer size | Up to 6 inches[3] | — |
| Programs | 10 programs each with up to 10 steps[3] | — |
| Control parameters | Acceleration, Speed, Time[3] | — |
| Exposure resolution | — | < 1 µm[2] |
| Alignment accuracy | — | Topside – 500 nm[2] |
| Exposure modes | — | Hard contact, soft contact, proximity, flood[2] |
| Spectral range | — | 365 nm – 405 nm[2] |
| Substrate accommodation | — | 1 cm² pieces and wafers up to 4″ (MA4) or 6″ (MA6)[2] |
| Uniformity | — | +/- 5% over exposure area[2] |
| Image capture | — | CCD camera and monitor[2] |
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