Waferpedia

Comparison ledger

2100 FC HSversus1 WBS 1 Wafer Substrate

Esec 2100 FC HS, Logitech 1 WBS 1 Wafer Substrate, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
OEMEsecLogitech
CategoryPackaging & BondingPackaging & Bonding
Wafer size——
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyEsec 2100 FC HSLogitech 1 WBS 1 Wafer Substrate
Specifications
Bonding methodFlip Chip Bonding[1]—
Bonding accuracy8 µm @3s (High Accuracy Mode)[1]—
Min. cycle time240 ms (incl. dip fluxing)[1]—
Wafer size4" to 12"[1]—
Frame size6", 8" and 12"[1]—
Die size0.2 to 20 mm[1]—
Die thickness≥ 0.05 mm / ≥ 2 mils[1]—
Strip dimensionsLength up to 500 mm; Width up to 125 mm (flat boats up to 137 mm)[1]—
Machine dimensions1430 x 1440 x 1400 mm (W x D x H)[1]—
WeightApprox. 1,400 kg / 3,000 lb[1]—
Placement speedUp to 16,000 UPH[2]—
Placement speed without dippingUp to 12,000 UPH[2]—
Bond force0.2 N[2]—
TypeAutomatic Wafer Die Attach[2]—
X Y placement accuracy8 µm[2]—
Wafer Size—6 inch[3]

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Sources (3)Every fact above is drawn from these public sources
  1. [1]besi.combesi.com
  2. [2]semiconductor.directorysemiconductor.directory
  3. [3]Equipment inventory listing