Waferpedia

Comparison ledger

RS50versusTS2000-IFE

Filmetrics RS50, MPI TS2000-IFE, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
RS50Filmetrics
OEMFilmetricsMPI
CategoryTest & ProbeTest & Probe
Wafer size200mm200mm
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyFilmetrics RS50MPI TS2000-IFE
Specifications
Type4 Point Probe System Mapping 4 point Probe system[1]—
Sheet resistance range1 mohm/sq to 200 Mohm/sq[1]—
Wafer capability200 mm wafers capable[1]—
Wafer size200 mm[1]—
Base tool—MPI TS2000-IFE 200-mm automated probe station[1]
Precision—micron precision[1]
Probe types in standard configuration—two RF probes of GSG, GSSG or GSGSG types[1]
Included instruments—microscope and digital camera[1]
Thermal chuck temperature range—-60°C to +200 °C[1]
Motion/control—probes, microscope, and chuck are automatically controlled in x, y, and z directions with optical feedback[1]
RF VNA—Anritsu 4-Port ME7838G vector network analyzer capable of a single sweep from 70 kHz to 220 GHz[1]
DC bias supply—up to 12 DC bias can be supplied by an Agilent 4156C probe station precision semiconductor parameter analyzer capable of +/-200 V, 0.5 A, and 100 V/us pulses[1]

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Sources (1)Every fact above is drawn from these public sources
  1. [1]cnf.cornell.educnf.cornell.edu