Comparison ledger
Nikon S 306 C, SUSS MicroTec 150 e Mask, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | S 306 CNikon | 150 e MaskSUSS MicroTec |
|---|---|---|
| OEM | Nikon | SUSS MicroTec |
| Category | Lithography | Lithography |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | 2002 orders accepted | — |
| Control system | — | — |
| Generation | — | — |
| Family | Nikon S 306 C | SUSS MicroTec 150 e Mask |
| Specifications | ||
| Arf Wavelength | 193 nm[1] | — |
| Configuration | Resolution ≤ 100 nm[2] | — |
| Reduction magnification 1 | 4[2] | — |
| Resolution | ≤ 100 nm (with SHRINC)[2] | — |
| Resolution (without SHRINC) | 120 nm[3] | — |
| Numerical Aperture (NA) | 0.78[2] | — |
| Exposure source | ArF excimer laser (193 nm)[2] | — |
| Reduction magnification | 1:4[2] | — |
| Maximum exposure range | 25 × 33 mm[2] | — |
| Overlap accuracy (EGA, |M| + 3σ) | ≤ 20 nm[2] | — |
| Alignment accuracy (three-sigma) | better than 23 nm[3] | — |
| Throughput | 135 – 200 wafers per hour (200 mm) / over 85 wafers per hour (300 mm)[3] | — |
| Wafer size | 8 inch (200 mm) and 300 mm[1] | — |
| Type | Scanner[1] | — |
| Make | Nikon[1] | — |
| Model | S 306 C[1] | — |
| NA | 0.78[2] | — |
| Alignment accuracy | better than 23 nm[3] | — |
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