Comparison ledger
Oxford Instruments 100 ICP Fluorine, Plasma-Therm SLR 770 RIE, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 100 ICP FluorineOxford Instruments | SLR 770 RIEPlasma-Therm |
|---|---|---|
| OEM | Oxford Instruments | Plasma-Therm |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Oxford Instruments 100 ICP Fluorine | Plasma-Therm SLR 770 |
| Specifications | ||
| Etch Gases | SF6, CF4, O2, Ar, N2, CHF3, C4F8[1] | — |
| Cryo DRIE etch rate | up to 5 µm/min[1] | — |
| Wafer size | 4 inch, 6 inch, 8 inch (with clamp change)[1] | — |
| Voltage | — | 208 V[2] |
| Frequency | — | 60 Hz[2] |
| Configuration | — | RF power supply has a water leak[2] |
| Process capabilities per chamber | — | RIE or PE adjustable[3] |
| Top electrode gap | — | Adjustable[3] |
| Pumping | — | TMP turbo pumps[3] |
| Gas lines per chamber | — | 8 gas lines and MFCs[3] |
| Maximum wafer size | — | up to 8 inch wafers[4] |
| Electrical | — | 208 V - 60 Hz[2] |
| Vintage | — | 1994 Vintage[2] |
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