Comparison ledger
Oxford Instruments 100 ICP Fluorine, Tegal 983, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 100 ICP FluorineOxford Instruments | 983Tegal |
|---|---|---|
| OEM | Oxford Instruments | Tegal |
| Category | Etch | Etch |
| Wafer size | — | 125mm |
| Process node | — | down to 0.5 micron |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Oxford Instruments 100 ICP Fluorine | Tegal 983 |
| Specifications | ||
| Etch Gases | SF6, CF4, O2, Ar, N2, CHF3, C4F8[1] | — |
| Cryo DRIE etch rate | up to 5 µm/min[1] | — |
| Wafer size | 4 inch, 6 inch, 8 inch (with clamp change)[1] | — |
| Model | — | 983[2] |
| Product name | — | 983 ACS[2] |
| Category | — | Diode plasma etch tool[3] |
| Fixed electrode gap | — | 6 mm[3] |
| Round substrate size | — | 125 mm to 150 mm round silicon and GaAs substrates[3] |
| Rectangular substrate size | — | 125 mm to 150 mm on a side[3] |
| Best-suited design rules | — | down to 0.5 micron[3] |
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