Comparison ledger
Oxford Instruments PlasmaPro 100 Cobra, Oxford Instruments PlasmaPro 100 Cobra ICP-RIE, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | PlasmaPro 100 CobraOxford Instruments | PlasmaPro 100 Cobra ICP-RIEOxford Instruments |
|---|---|---|
| OEM | Oxford Instruments | Oxford Instruments |
| Category | Etch | Etch |
| Wafer size | 100mm | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Oxford Instruments PlasmaPro 100 | Oxford Instruments PlasmaPro 100 |
| Specifications | ||
| Configuration | With HDD and Software[1] | Configured for 6" substrates[3] |
| Etch plasma type | Inductively Coupled Plasma (ICP)[2] | — |
| Process gases | O2 (100sccm), O2 (10sccm), SF6, CF4, BCl3, Ar, Cl2, HBr[2] | — |
| Mass flow controllers | 8 digital MFCs[2] | — |
| Chuck type | Electrostatic clamping and biasing chuck[2] | — |
| Chuck temperature range | 20°C to 60°C[2] | — |
| End-point detection | Laser reflectometry/interferometry and Optical Emission Spectroscopy (OES)[2] | — |
| Type | Plasma etching tool[2] | — |
| Processing diameter | Full wafer 100 mm[2] | — |
| Plasma type | High density plasma of ICP (Inductively Coupled Plasma) type[2] | — |
| Chuck | Electrostatic clamping and biasing chuck controlled in temperature[2] | — |
| Supported gases | O2 (100 sccm), O2 (10 sccm), SF6, CF4, BCl3, Ar, Cl2, HBr[2] | — |
| Endpoint detection | Laser reflectometry/interferometry and optical emission spectroscopy[2] | — |
| Wafer size | 100 mm (full wafer)[2] | — |
| Number of MFCs | 8 digital Mass Flow Controllers[2] | — |
| Gases available | O2 (100sccm), O2 (10sccm), SF6, CF4, BCl3, Ar, Cl2, HBr[2] | — |
| Etch materials | Al, Ti, TiN, Si, SiO2, Si3N4, polyimide, Al2O3[2] | — |
| Gases | O2 (100 sccm), O2 (10 sccm), SF6, CF4, BCl3, Ar, Cl2, HBr[2] | — |
| Compatibility | Microelectronic compatible[2] | — |
| Voltage | — | 208 V, 3 Phase, 50/60 Hz[3] |
| Wafer size support (200 mm platform) | — | 200 mm (8 in) platform; compatible with all wafer sizes up to 200 mm[4] |
| Wafer size (configured system) | — | 6 inch substrates[3] |
| Substrate temperature range | — | -150°C to +400°C[4] |
| ICP source sizes | — | 65 mm, 180 mm, 300 mm[4] |
| Etch chemistries | — | SF6, CHF3, CF4, O2[5] |
| Electrical requirements | — | 208 V, 3 phase, 50/60 Hz[3] |
| Included components (example configuration) | — | Advanced Energy paramount MF 5003 RF Generator; Pfeiffer Adixen Magpower Turbopump Controller; Pfeiffer Adixen A 124 H Vacuum Pump; Pfeiffer Adixen ZCP 15 G Vacuum Pump; Gas Box; Control Computer & LCD Monitor with OS PTIQ Version 2021.12.2.0[3] |
| Upgrades/accessories available | — | Dry pump N2 standby, gas pod, Logviewer software, optical end point detectors, soft pump, turbomolecular vacuum pump, X20 Control System, Advanced Energy Paramount generator, automatic pressure control, dual CM gauge switching, LN2 autochangeover, TEOS liquid level sensing[4] |
| OEM | — | Oxford Instruments[3] |
| Model | — | PlasmaPro 100 Cobra ICP-RIE[3] |
| Process type | — | Inductively Coupled Plasma - Reactive Ion Etch[3] |
| Configured substrate size | — | 6" substrates[3] |
| Wafer size platform | — | 200mm platform[4] |
| Maximum wafer size | — | up to 200mm[4] |
| Plasma source | — | high-density inductively coupled plasma[6] |
| Etch performance | — | fast etch rates[6] |
| Process characteristics | — | excellent uniformity, high-throughput, high-precision and low-damage processes[6] |
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