Comparison ledger
Oxford Instruments PlasmaPro80, Plasma-Therm 720/740, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | PlasmaPro80Oxford Instruments | 720/740Plasma-Therm |
|---|---|---|
| OEM | Oxford Instruments | Plasma-Therm |
| Category | Etch | Etch |
| Wafer size | 200mm | 200mm |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Oxford Instruments PlasmaPro80 | Plasma-Therm 720/740 |
| Cited variants | ||
| Specifications | ||
| OEM | Oxford Instruments[1] | — |
| Model | PlasmaPro80[1] | — |
| Tool type | RIE dry etcher[1] | — |
| Chemistry | fluorine chemistry[1] | chlorine and fluorine based[2] |
| Process gases | CHF3, SF6, O2, Ar[1] | — |
| Maximum power | 300 W @ 13.56 MHz[1] | — |
| Load system | Open-load system (no load lock)[1] | — |
| Wafer handling | chips to wafer up to 200mm[1] | — |
| Wafer size | 100mm wafers[1] | — |
| Applications | hBN, SiGe, graphite and graphene soft etching[1] | — |
| Endpoint detection | Laser reflectometry/interferometry end-point-detection[1] | — |
| Process type | RIE (Reactive Ion Etching), dry etcher[1] | — |
| Wafer size (max) | 200 mm[1] | — |
| Loading design | Open loading design (quick wafer loading/unloading)[3] | — |
| Wafer temperature control | Superior wafer temperature uniformity[3] | — |
| Compliance standards | Semi S2/S8[3] | — |
| Maximum wafer size | 200 mm[1] | — |
| Process gases (RIE 1) | CHF3, SF6, O2, Ar[1] | — |
| Process gases (RIE 2) | CF4, CHF3, SF6, O2, Ar[1] | — |
| Wafer capacity (RIE 2) | 100 mm wafers only, no chips[1] | — |
| Endpoint detection (RIE 2) | Laser reflectometry/interferometry[1] | — |
| system type | — | dual chamber RIE loadlocked system[2] |
| chemistry | — | chlorine and fluorine based chemistry[2] |
| left chamber designation | — | 740 (left chamber), designated Au exposure system[2] |
| right chamber designation | — | 720 (right chamber), designated for chlorine and fluorine based etching of 2D materials and perovskites[2] |
| wafer capacity | — | up to 200mm diameter wafers[2] |
| Max wafer diameter | — | 200mm[2] |
Plan your fab
Building a Etch process? Get a complete equipment list.
Open the fab equipment planner →