Comparison ledger
Pfeiffer ATH1603M, STS 310, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | ATH1603MPfeiffer | 310STS |
|---|---|---|
| OEM | Pfeiffer | STS |
| Category | Deposition | Deposition |
| Wafer size | 100mm | 100mm |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Pfeiffer ATH1603M | STS 310 |
| Cited variants | — | |
| Specifications | ||
| Role | Turbo pump[6] | — |
| System location | Chamber secondary pump[6] | — |
| Associated system | EVA 451 thermal evaporator[6] | — |
| Supported wafer sizes in associated system | 100 mm wafers; 150 mm wafers[6] | — |
| Pumping speed (N₂) | approx. 1,400–1,600 l/s[1] | — |
| Ultimate pressure | up to approx. 6 × 10⁻⁹ mbar[1] | — |
| Rated speed | 39,000 rpm[1] | — |
| Bearing type | Magnetic bearing (MagLev)[1] | — |
| Cooling | Water-cooled[1] | — |
| Inlet flange | DN250 ISO-F (with protective grille) / DN200 ISO-F[1] | — |
| Outlet flange | KF40 (NW40, ISO-KF40)[1] | — |
| Motor parameters | 44 Vrms, 1,300 Hz, 7 Arms[5] | — |
| Controller | External electronics required (e.g., MAGPOWER controller)[5] | — |
| Bearing | Magnetic bearing[1] | — |
| Motor voltage | 44 Vrms[1] | — |
| Motor frequency | 1,300 Hz[1] | — |
| Motor current | 7 Arms[1] | — |
| Country of origin | France[4] | — |
| Inlet flange (alternate) | 200 CF-F[2] | — |
| Tool type | — | plasma-enhanced chemical-vapor-deposition (PECVD) system[7] |
| Wafer size | — | 100-mm-diameter silicon wafers[7] |
| Deposition material | — | silicon dioxide[7] |
| Process | — | Plasma-enhanced chemical vapor deposition (PECVD)[7] |
| Wafer Size | — | 100 mm[7] |
| Deposited Materials | — | Silicon dioxide (oxide) and silicon nitride (SiNx)[7] |
| Oxide Recipe Details | — | 2% SiH4 in Ar at 400 sccm, N2O at 900 sccm, 60 W at 13.56 MHz, 650 mtorr, 300 °C[7] |
| Nitride Recipe (Low RI) Details | — | 2% SiH4 in Ar at 200 sccm, N2 at 2000 sccm, power alternating between 30 W at 13.56 MHz for 6 s and 25 W at 187 kHz for 3 s, 650 mtorr, 300 °C[7] |
| Nitride Recipe (High RI) Modification | — | Increase 2% SiH4/Ar flow to 500 sccm[7] |
| Temperature | — | 300 °C[7] |
| Pressure | — | 650 mtorr[7] |
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