Comparison ledger
Plasma-Therm 770, Tegal 903, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 770Plasma-Therm | 903Tegal |
|---|---|---|
| OEM | Plasma-Therm | Tegal |
| Category | Etch | Etch |
| Wafer size | 100mm | 100mm |
| Process node | — | — |
| Introduced | — | 2000 |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Plasma-Therm 770 | Tegal 903 |
| Cited variants | — | |
| Specifications | ||
| Manufacturer | Plasmatherm (Unaxis)[3] | — |
| Model | Plasma-Therm 770 SLR series[3] | — |
| Tool type | Dry Etch[3] | diode plasma etch tool[6] |
| System type | Fluorine-based ICP etcher with loadlock[3] | — |
| Plasma source | Inductively Coupled Plasma (ICP) coil[3] | — |
| Substrate bias | Capacitively coupled substrate RF supply[3] | — |
| ICP coil power | 1000 W at 2 MHz[3] | — |
| Substrate bias power | 500 W at 13.56 MHz[3] | — |
| Available gases | C4F8, SF6, O2, Ar, N2, CHF3, CF4[3] | — |
| Backside cooling | Helium backside cooling[3] | — |
| Chuck temperature | 10°C standard[3] | — |
| Wafer handling | Single 100 mm / 4-inch wafer handling with physical topside clamp contacting the outer 5 mm of the wafer[3] | — |
| Control system | Windows-based computer control of process and wafer handling[3] | — |
| Endpoint monitoring | In-situ laser monitor with camera and simulation software[3] | — |
| Number of MFC gas controllers | 8[4] | — |
| Gases (chlorine configuration) | N₂, O₂, CHF₃, AR, CH₄, CL₂, BCL₃, CF₄[4] | — |
| Wafer size range (with appropriate kit) | 2" to 8"[4] | — |
| Gases (previous usage, chlorine configuration) | N₂, O₂, He, CHF₃, Cl₂, BCl₃[5] | — |
| Wafer size support | — | 75-150 mm round silicon and GaAs substrates; rectangular substrates from 100-125 mm on a side[6] |
| Reactors/materials | — | narrow gap RF diode reactor; plasma etch of silicon oxide and silicon nitride materials[1] |
| Wafer size | — | 3", 100mm – 150mm[1] |
| Reactor type | — | narrow gap RF diode reactor[1] |
| Materials | — | silicon oxide and silicon nitride[1] |
| Substrate range | — | 75–150 mm round silicon and GaAs substrates; rectangular substrates from 100–125 mm on a side[6] |
| Transport system | — | Production-proven transport system[6] |
| Round substrate range | — | 75-150 mm round silicon and GaAs substrates[6] |
| Rectangular substrate range | — | 100-125 mm on a side[6] |
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