Aixtron

2600 G 3 HT MOCVD Reactor

Deposition Aixtron AIX 2600 family

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2600 G 3 HT MOCVD Reactor — Inventory photo — Fig. 012600 G 3 HT MOCVD ReactorInventory photo^[1]

Vacuum

Custom Built Exhaust System^[1]

Gas delivery

Active^[1]

What it is

The Aixtron 2600 G 3 HT is a metal organic chemical vapor deposition (MOCVD) reactor designed for epitaxial growth of compound semiconductor thin films. The system is configured for wafer sizes of three inches and six inches, and supports processes for InGaN and AlInGaP MOCVD epitaxy.^[3]^[1]^[2]

Where it fits in the process flow

General reference — not yet source-verified

In semiconductor manufacturing, MOCVD is used to deposit epitaxial layers of compound semiconductors on substrates such as sapphire, silicon carbide, or gallium arsenide. The process typically follows substrate cleaning and precedes device fabrication steps such as lithography and metallization.

Applications

General reference — not yet source-verified

MOCVD epitaxy is used to produce active layers for optoelectronic devices including light-emitting diodes (LEDs), laser diodes, and high electron mobility transistors (HEMTs), as well as for photovoltaic cells and other compound semiconductor devices.

What do the numbers mean?

Power & electrical2

Heating System: RF Coil with Trumpf Huttinger RF Generator BIG 120/50^[1]
Heating System: RF Coil with Trumpf Huttinger RF Generator BIG 120/150^[2]

Vacuum & pumping3

Custom Built Exhaust System^[1]
Process Pump: Kashiyama SDE 300^[1]
DOR & Glove Box Pumps: Adixen ACP - 15G x 2^[1]

Wafer handling2

Wafer: 7 x 6"^[1]
Wafer: 11 x 3"^[2]

Gas & chemistry1

Gas Foil Rotation (GFR): Active^[1]

Control & software5

Software Version: CACE 3.5.0286^[1]
PLC: 3.7^[1]
Glove Box: MBraun Nitrogen Glovebox with Controller^[1]; Quartz Ceiling with Temperature Control^[1]
Software: CACE 3.5.0284^[2]

Configuration & options16

SLC: 2.01^[1]
Process: AllnGaP MOCVD Epitaxy^[1]
Metal Organic Sources: TMIn x 3, TMGa x 2, TMAI x 1, Cp2Mg x 1, DIPTe x 1, CBr4 x 1^[1]
Hydride Sources: PH 3 x 1, AsH3 x 1, 100 ppm SiH4 in Ar x 1^[1]
Concentration Monitors: Episons 5 x 3 for TMIn^[1]; Chiller Baths^[1]
Purifiers: Entegris Getter for H2 & N2^[1]
Filters: Entegris Filtersfor AsH3 & Ph3^[1]; Custom Built Wet / Dry Burn Abatement System^[1]
Reactor Chiller: Affinity Recirculating Closed Loop Chiller^[1]; In-Situ Pyrometry Available^[1]
Process: InGaN MOCVD Epitaxy^[2]
Metal Organic Sources: TMin x 3, TMGa x 2, TEGa x 2, TMAI x 1, Cp2Mg x 1^[2]
Hydride Sources: NH3 x 2, 100 ppm SiH4 in Ar x 1^[2]
Concentration Monitors: Epison 4 x 3 for TMin^[2]
Purifiers: Nanochem for NH3, SAES Monotorr for N2^[2]

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What does it need to run?

Site utility requirements, footprint, and infrastructure needed to install and operate this tool. Sourced from public records.

Heating SystemRF Coil with Trumpf Huttinger RF Generator BIG 120/50^[1]
ConfigurationCustom Built Exhaust System^[1]
Process PumpKashiyama SDE 300^[1]
DOR & Glove Box PumpsAdixen ACP - 15G x 2^[1]
Gas Foil Rotation (GFR)Active^[1]
Heating SystemRF Coil with Trumpf Huttinger RF Generator BIG 120/150^[2]

Where are the manuals?

Generated from public-source data on file. Enter your email to access — nothing is published; details are routed privately.

Not publicly documented

Field notes

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Frequently asked questions

What epitaxial processes are available on this system?

The system supports InGaN MOCVD epitaxy and AlInGaP MOCVD epitaxy.^[1]^[2]

Does the reactor have in-situ monitoring capability?

The system is equipped with in-situ pyrometry for real-time temperature measurement during deposition.^[1]^[2]

Not publicly documented

The following facts about the 2600 G 3 HT MOCVD Reactor are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.

No publicly documented production dates or lifecycle milestones (introduction, end of production, EOL) for the 2600 G 3 HT MOCVD Reactor are on record.
Answerable by: OEM historical records or a trade-press announcement
No publicly documented variants, configuration options, or revision breakpoints of the 2600 G 3 HT MOCVD Reactor are on record.
Answerable by: an OEM product catalog or an engineer who ordered or specified the tool
The control-system platform and OS era of the 2600 G 3 HT MOCVD Reactor are not on record.
Answerable by: an engineer who operated it or OEM installation records
No publicly documented failure modes or field errata for the 2600 G 3 HT MOCVD Reactor are on record.
Answerable by: a field service engineer, process engineer, or maintenance technician
The process node or technology generation of the 2600 G 3 HT MOCVD Reactor is not on record.
Answerable by: an OEM datasheet or a fab qualification report