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Aixtron

AIX G 5 WW EPI

DepositionAixtron AIX G 5 WW EPI family
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This page was generated automatically from cited public sources and hasn't completed the full research pass yet. Every specification shown carries its source; more detail is added as research completes.

AixtronAIX G 5 WW EPI
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What it is

The Aixtron AIX G 5 WW EPI is an epitaxial silicon deposition system. The system is configured for 6-inch wafers.[1]

The Aixtron AIX G 5 WW EPI Reactor is an epitaxial silicon deposition system for 4-inch wafers.[2]

Where it fits in the process flow

General reference — not yet source-verified

Epitaxial deposition is performed after initial wafer cleaning and before the main device fabrication steps. The epitaxial layer provides a high-quality crystalline surface for subsequent lithography, doping, and dielectric deposition. Upstream processes include wafer slicing, polishing, and cleaning; downstream processes include oxidation, gate formation, and metallization.

In semiconductor manufacturing, epitaxial reactors are used to create layers with precise resistivity and thickness for devices such as power MOSFETs, bipolar transistors, and integrated circuits requiring low defect densities.

Applications

General reference — not yet source-verified

The AIX G 5 WW EPI system is suitable for research and production environments requiring flexible wafer size handling and repeatable epitaxial layer quality.

What do the numbers mean?

Power & electrical3

Frequency
60 Hz[2]
Accurate?
Phase
3 Phase[2]
Accurate?
Voltage
208 V / 120 V AC[2]
Accurate?

Wafer handling2

Wafer size
6 inch[1]
Accurate?
Process
Epitaxial silicon deposition system for 4-inch wafers[2]
Accurate?

Configuration & options5

OEM
Aixtron[1]
Accurate?
Model
AIX G 5 WW[1]
Accurate?
Equipment name
AIX G 5 WW EPI (Epitaxial Silicon Deposition)[1]
Accurate?
Process
Epitaxial silicon deposition[1]
Accurate?
4 Wire + Ground[2]
Accurate?
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What does it need to run?

Site utility requirements, footprint, and infrastructure needed to install and operate this tool. Sourced from public records.

  • Frequency60 Hz[2]
  • Phase3 Phase[2]
  • Voltage208 V / 120 V AC[2]

Where are the manuals?

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Not publicly documented

Field notes

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Frequently asked questions

What are the electrical requirements for the AIX G 5 WW EPI Reactor?

The system requires 3-phase power at 208 Volts AC and 120 Volts AC, 60 Hz frequency, with a 4-wire plus ground configuration.[2]

What type of deposition does the AIX G 5 WW perform?

The AIX G 5 WW performs epitaxial silicon deposition.[1][2]

Not publicly documented

The following facts about the AIX G 5 WW EPI are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.

  • No publicly documented production dates or lifecycle milestones (introduction, end of production, EOL) for the AIX G 5 WW EPI are on record.

    Answerable by: OEM historical records or a trade-press announcement

  • No publicly documented variants, configuration options, or revision breakpoints of the AIX G 5 WW EPI are on record.

    Answerable by: an OEM product catalog or an engineer who ordered or specified the tool

  • The control-system platform and OS era of the AIX G 5 WW EPI are not on record.

    Answerable by: an engineer who operated it or OEM installation records

  • No publicly documented failure modes or field errata for the AIX G 5 WW EPI are on record.

    Answerable by: a field service engineer, process engineer, or maintenance technician

  • The process node or technology generation of the AIX G 5 WW EPI is not on record.

    Answerable by: an OEM datasheet or a fab qualification report

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Sources & citations

Sources (2)Every fact above is drawn from these public sources
  1. [1]Equipment inventory listing
  2. [2]waferpedia.com — waferpedia.comwaferpedia.com
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Last updated Sep 26, 2026.

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