Aixtron
G 5 HT IC 2 MOCVD Reactor
The Aixtron G 5 HT IC 2 MOCVD Reactor is a MOCVD reactor. The Aixtron G 5 HT IC 2 MOCVD Reactor is configured for InGaN MOCVD epitaxy. The Aixtron G 5 HT IC 2 MOCVD Reactor uses 6 x 6-inch wafers.[1][2][3]
What it is
How it works
The G 5 HT IC 2 includes an RF coil heating system with a Trumpf Huttinger RF generator, individual gas foil rotation control for each puck, a standard exhaust system, a process pump, and in-situ pyrometry.[1][2]
The G 5 HT IC 2 includes a nitrogen glovebox, gas purification components, concentration monitors, chiller baths for metal organic sources, and a reactor chiller to support precursor handling and thermal control.[1][2]
Where it fits in the process flow
Applications
What do the numbers mean?
Power & electrical1
Vacuum & pumping3
- Standard Exhaust System[1]
Wafer handling1
Gas & chemistry1
Control & software3
Configuration & options18
What does it need to run?
Site utility requirements, footprint, and infrastructure needed to install and operate this tool. Sourced from public records.
Where are the manuals?
Generated from public-source data on file. Enter your email to access — nothing is published; details are routed privately.
Not publicly documented
Field notes
No research found yet — worked with this tool? Share what you know.
Frequently asked questions
What process is the Aixtron G 5 HT IC 2 MOCVD Reactor configured to run?
The Aixtron G 5 HT IC 2 MOCVD Reactor is configured for InGaN MOCVD epitaxy.[1][2][3]
What wafer size does the Aixtron G 5 HT IC 2 MOCVD Reactor use?
The Aixtron G 5 HT IC 2 MOCVD Reactor uses six-inch wafers.[1][2][3]
What heating method is included on the Aixtron G 5 HT IC 2 MOCVD Reactor?
The Aixtron G 5 HT IC 2 MOCVD Reactor includes an RF coil heating system with a Trumpf Huttinger RF generator.[1][2]
Not publicly documented
The following facts about the G 5 HT IC 2 MOCVD Reactor are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.
No publicly documented production dates or lifecycle milestones (introduction, end of production, EOL) for the G 5 HT IC 2 MOCVD Reactor are on record.
Answerable by: OEM historical records or a trade-press announcement
No publicly documented variants, configuration options, or revision breakpoints of the G 5 HT IC 2 MOCVD Reactor are on record.
Answerable by: an OEM product catalog or an engineer who ordered or specified the tool
The control-system platform and OS era of the G 5 HT IC 2 MOCVD Reactor are not on record.
Answerable by: an engineer who operated it or OEM installation records
No publicly documented failure modes or field errata for the G 5 HT IC 2 MOCVD Reactor are on record.
Answerable by: a field service engineer, process engineer, or maintenance technician
The process node or technology generation of the G 5 HT IC 2 MOCVD Reactor is not on record.
Answerable by: an OEM datasheet or a fab qualification report
No research found yet — worked with this tool? Share what you know.
Sources & citations
Sources (3)Every fact above is drawn from these public sources
- [1]Inventory photo
- [2]G 5 HT IC 2 MOCVD Reactor — Aixtron | Specs, Sourcing & Service | Waferpedia — waferpedia.comwaferpedia.com
- [3]Aixtron G 5 HT IC 2 MOCVD Reactor family | Waferpedia — waferpedia.comwaferpedia.com
Last updated Oct 11, 2026.
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