G 5 Plus

The Aixtron G 5 Plus is a metal-organic chemical vapor deposition (MOCVD) system for compound semiconductors. The system is designed for gallium nitride (GaN) epitaxy on substrates including silicon, sapphire, and silicon carbide. The G 5 Plus uses a planetary reactor module and supports wafer sizes of 150 mm and 200 mm.^[3][1][2]

The G 5 Plus operates as a batch reactor with a planetary susceptor that rotates wafers to achieve uniform film thickness, composition, and dopant concentration. The reactor employs a warm ceiling design to minimize thermal gradients and wafer curvature, enabling the use of standard-thickness silicon wafers. The system features a cassette-to-cassette wafer handler and chlorine-based in-situ cleaning. Gas delivery includes a Penta Injector module and Horiba mass flow controllers. Process gases used include hydrogen, nitrogen, ammonia, and chlorine; metalorganic sources include trimethylgallium, trimethylaluminium, and Cp2Mg. The operating pressure inside the system is maximum 6 barg.^[3][1][2]

MOCVD systems such as the G 5 Plus are used in the front-end of line for epitaxial deposition of compound semiconductor layers. The tool sits after substrate cleaning and preparation, depositing the active device layers before subsequent photolithography, etching, and metallization steps. The G 5 Plus is typically employed in fabs producing GaN-based devices for optoelectronics, power electronics, and RF applications.

The G 5 Plus is applied to gallium nitride deposition on silicon, sapphire, and silicon carbide substrates. The platform supports advanced GaN applications on 150 mm and 200 mm substrates, and is used for producing high-electron-mobility transistors, light-emitting diodes, and power devices.^[3][1]