Applied Materials
The Applied Materials Mirra 3400 is a chemical mechanical planarization (CMP) system for 150 mm and 200 mm wafer processing. The Mirra 3400 supports multiple technologies including oxide, STI, tungsten, and copper CMP, as well as polyimide and amorphous silicon materials.[1]

The Applied Materials Mirra 3400 is a chemical mechanical polisher used for semiconductor wafer planarization.
A chemical mechanical polisher removes material from a wafer by combining a rotating platen, a polishing head, slurry delivery, and a pad conditioner.
The Mirra 3400 sits in the wafer-finishing portion of semiconductor manufacturing, after patterning steps that create topography and before later integration steps that benefit from a planar surface.
The Mirra 3400 is used for chemical mechanical polishing of semiconductor wafers.
| Designation | Generation | Vintage | Changes | Source |
|---|---|---|---|---|
| Mirra 3400 Stand-Alone | — | 1996 | Stand-alone configuration for Oxide/STI CMP, includes wet-in-wet-out handling and specific options such as TITAN1 UPA, DDF3 pad conditioner, and Windows NT control. | fabsurplus.com[5] |
Tools documented as functional equivalents — same process step and wafer size, from a different manufacturer. Each equivalence cites its source.
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The primary purpose is to planarize (flatten) wafer surfaces after deposition or etching steps, enabling precise lithographic patterning and ensuring uniform layer thickness for subsequent processes.
Removal rate is controlled by adjusting process parameters including platen and carrier rotational speeds, downforce pressure, slurry composition and flow rate, as well as pad conditioning frequency and pressure.
Common defects include scratches, dishing (excessive removal in patterned areas), erosion (thinning of features), micro-scratches, and residual slurry particles. Proper process tuning and post-CMP cleaning are critical to minimize these.
Machines of the Mirra class are generally single-wafer systems, processing one wafer at a time through multiple polishing heads and stations, allowing independent control of each wafer's process conditions.
Slurries are formulated according to the material being polished. For example, oxide CMP uses colloidal silica slurries, while copper CMP employs slurries with complex chemical inhibitors and abrasive particles. The choice of slurry directly affects removal rate, selectivity, and defectivity.
The following facts about the Mirra 3400 are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.
The control-system platform and OS era of the Mirra 3400 are not on record.
Answerable by: an engineer who operated it or OEM installation records
No publicly documented failure modes or field errata for the Mirra 3400 are on record.
Answerable by: a field service engineer, process engineer, or maintenance technician
The process node or technology generation of the Mirra 3400 is not on record.
Answerable by: an OEM datasheet or a fab qualification report
No publicly documented compatible parts, consumables, or accessories for the Mirra 3400 are on record.
Answerable by: an OEM parts catalog or a service engineer
No publicly hosted manuals, SOPs, or datasheets for the Mirra 3400 are on record.
Answerable by: university cleanroom staff or an OEM application specialist
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Last updated Oct 3, 2026.
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