ASM
Epsilon 3200 Epitaxial Reactor
Provisional entry — research in progress
This page was generated automatically from cited public sources and hasn't completed the full research pass yet. Every specification shown carries its source; more detail is added as research completes.
What it is
How it works
General reference — not yet source-verifiedThe substrate rests on a susceptor that is heated, typically by lamps or RF induction, to temperatures sufficient for epitaxial growth while the chamber atmosphere is carefully controlled to prevent contamination.
Where it fits in the process flow
General reference — not yet source-verifiedIn semiconductor fabrication, epitaxial deposition is performed after wafer cleaning and before the main device processing steps such as oxidation, doping, and metallization.
The epitaxial layer provides a high-quality crystalline surface for subsequent lithography and implantation, and is critical for devices that require controlled doping profiles and defect-free interfaces.
Applications
General reference — not yet source-verifiedEpitaxial reactors are used to produce layers for advanced CMOS logic, memory, power semiconductors, and radio-frequency (RF) devices.
The process is also applied in the fabrication of silicon-germanium (SiGe) heterojunction bipolar transistors and other specialty structures requiring precise compositional control.
What do the numbers mean?
No specifications recorded yet
Be the first to add cited specifications for this tool.
Where are the manuals?
Generated from public-source data on file. Enter your email to access — nothing is published; details are routed privately.
Not publicly documented
Field notes
No research found yet — worked with this tool? Share what you know.
Frequently asked questions
Not publicly documented
The following facts about the Epsilon 3200 Epitaxial Reactor are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.
No specifications for the Epsilon 3200 Epitaxial Reactor are on record.
Answerable by: an OEM datasheet, a cleanroom equipment inventory, or an engineer who operated or installed it
No publicly documented production dates or lifecycle milestones (introduction, end of production, EOL) for the Epsilon 3200 Epitaxial Reactor are on record.
Answerable by: OEM historical records or a trade-press announcement
No publicly documented variants, configuration options, or revision breakpoints of the Epsilon 3200 Epitaxial Reactor are on record.
Answerable by: an OEM product catalog or an engineer who ordered or specified the tool
The control-system platform and OS era of the Epsilon 3200 Epitaxial Reactor are not on record.
Answerable by: an engineer who operated it or OEM installation records
No publicly documented failure modes or field errata for the Epsilon 3200 Epitaxial Reactor are on record.
Answerable by: a field service engineer, process engineer, or maintenance technician
No research found yet — worked with this tool? Share what you know.
Sources & citations
Sources (3)Every fact above is drawn from these public sources
- [1]Equipment inventory listing
- [2]Epsilon 3200 Epitaxial Reactor — ASM | Specs, Sourcing & Service | Waferpedia — waferpedia.comwaferpedia.com
- [3]PTW ASIA | ASM Epsilon 3200 — ptwsingapore.comptwsingapore.com
Last updated Oct 1, 2026.
Compare with similar tools
View all →
The Applied Materials 0010-13622 is an RF match unit intended for PVD (Physical Vapor Deposition) described as a High Efficiency HE RF Match-Bias.
The Applied Materials 0020 12458 Part is an insulator, side match component for the Hdp-Cvd Ultima Plus system.
Applied Materials 0020 18455 is a part described as "Shaft, Rf In Local Match, Hdpcvd, Rev3."