Waferpedia

ASML

PAS 5500

LegacyLithography200mm280 nmIntroduced Produced 2000–2010i-lineASML PAS 5500 family
Research Quality: 80% complete

The ASML PAS 5500 is a step-and-repeat projection stepper for photolithography. The PAS 5500 uses reduction optics, typically 5X or 4X, to transfer mask patterns onto wafers. The PAS 5500 family includes i-line (365 nm) and DUV (248 nm) models, with resolutions from 450 nm down to below 200 nm.[1][2][3][4]

PAS 5500 — nist.gov
Fig. 01PAS 5500nist.gov[1]
  • Plate 01PAS 5500 – The Inside Story (1993) | ASML

    ASMLWatch on YouTube
  • Plate 02ASML PAS 5500 750 + TEL Act 8 Bundle Available, Wafer size 200mm, Location Asia

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  • Plate 03ASML's The PAS5500 Revolution | Follow for full video.

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Wafer size

200mm

Produced

2000–2010

Node / era

280 nm

Performance

Topside and backside alignment[3]

Optics

365 nm[1]

Preceded by
PAS 2000
This tool
PAS 5500
Succeeded by
Latest generation
All related

What it is

The ASML PAS 5500 series includes both i-line and deep-ultraviolet (DUV) variants. The PAS 5500/275D is an i-line stepper operating at 365 nm with 280 nm resolution and 40 nm overlay accuracy. The PAS 5500/60 is also an i-line system achieving 450 nm resolution and 90 nm overlay. The PAS 5500/350C is a DUV stepper using a KrF excimer laser at 248 nm, with resolution below 180 nm and overlay below 30 nm. The PAS 5500/300 uses 248 nm DUV light, capable of resolving dense features below 200 nm and isolated lines below 150 nm.[1][2][3][4]

How it works

The PAS 5500 series uses a wafer handler to load wafers from cassettes and a prealigner for centering. The wafer stage, constructed from Zerodur for low thermal expansion, is positioned using multiple interferometers for nanometer-scale accuracy. A level sensor measures wafer height and tilt to maintain focus during exposure. The system can expose fields of various sizes depending on the reticle and lens configuration.[3]

What can it run?

Process applications and technology nodes documented for this tool.

  • Measurement calibration patterns
  • Gratings and waveguides
  • Microelectromechanical systems
  • Thermal sensors

Why won't it start?

Documented failure modes, common issues, and field considerations.

  • Backside contamination can locally deform the wafer surface and degrade focus/printing quality.
  • Wafer stage contamination can result in machine downtime of several days.
  • Reticle contamination can cause printing defects and irreversible degradation of printing performance.

What do the numbers mean?

Wafer handling29

Wafer handling
Fully automated wafer handling system[1]
Accurate?
Supported substrate diameter
200 mm diameter wafers down to small pieces[1]
Accurate?
Throughput
84 wafers per hour[1]
Accurate?
Substrate size
4 inch wafer; 150 mm capable with advanced notice[2]
Accurate?
Substrate types
Silicon, Silicon Germanium, Quartz, Sapphire, Glass[2]
Accurate?
Throughput
High throughput (> 100 wafers/hour)[3]
Accurate?
Wafer sizes
100 mm default; 150 mm on request[3]
Accurate?
Throughput
>= 84 wafers per hour (PAS 5500/275D), > 100 wafers per hour (PAS 5500/350C)[1]
Accurate?
Wafer sizes supported
75 mm, 100 mm, 150 mm, 200 mm (PAS 5500/275D); 100 mm default, 150 mm capable (PAS 5500/60); 100 mm default, 150 mm on request, also 4", 6", 8" (PAS 5500/350C)[1]
Accurate?
Throughput
≥84 wafers per hour (i-line)[1]
Accurate?
Throughput
>100 wafers per hour (DUV)[3]
Accurate?
Maximum wafer size
200 mm (8 in)[1]
Accurate?
Supported wafer diameters
75 mm, 100 mm, 150 mm, 200 mm (i-line)[1]
Accurate?
Maximum supported substrate diameter
200 mm[1]
Accurate?
Supported sample sizes
75 mm, 100 mm, 150 mm, and 200 mm wafer diameters[1]
Accurate?
Substrate thickness
1 mm maximum[1]
Accurate?
Substrate sizes
4 inch wafer[2]
Accurate?
Supported wafer diameters
75 mm, 100 mm, 150 mm, 200 mm[1]
Accurate?
Default wafer diameter
100 mm[2]
Accurate?
Throughput (PAS 5500/275D)
84 wafers per hour[1]
Accurate?
Throughput (PAS 5500/350C)
>100 wafers per hour[3]
Accurate?
Supported wafer diameters (PAS 5500/275D)
75 mm, 100 mm, 150 mm, 200 mm[1]
Accurate?
Supported wafer diameters (PAS 5500/60)
100 mm (default), 150 mm (with advance notice)[2]
Accurate?
Supported wafer diameters (PAS 5500/350C)
100 mm (default), 150 mm (on request)[3]
Accurate?
Variant substrate size
4 inch wafer; 150 mm capable with advanced notice[2]
Accurate?
Variant wafer cassette processing
automatic 100 mm wafer cassette processing capability[2]
Accurate?
Variant wafer diameter
100 mm default[2]
Accurate?
Variant throughput
> 100 wafers/hour[3]
Accurate?
Variant wafer sizes
100 mm default; 150 mm on request[3]
Accurate?

Optics & imaging54

Exposure wavelength
365 nm[1]2 sources
Accurate?
Resolution
280 nm[1]
Accurate?
Minimum resolution
0.45 μm[2]
Accurate?
Mask size
5 inch[2]
Accurate?
Technology
DUV lithography stepper using KrF laser source (248 nm)[3]
Accurate?
Resolution
280 nm (PAS 5500/275D), 450 nm (PAS 5500/60), <180 nm (PAS 5500/350C)[1]
Accurate?
Exposure wavelength
365 nm (i-line) for PAS 5500/275D and PAS 5500/60; 248 nm (KrF DUV) for PAS 5500/350C[1]
Accurate?
Overlay accuracy
<= 40 nm (PAS 5500/275D), 90 nm (PAS 5500/60), <30 nm (PAS 5500/350C)[1]
Accurate?
Numerical aperture
0.48 to 0.60 (PAS 5500/275D), 0.40 to 0.63 (PAS 5500/350C)[1]
Accurate?
Reticle size
152.40 mm x 152.40 mm (PAS 5500/275D), 5 inch (PAS 5500/60), 6 inch square (PAS 5500/350C)[1]
Accurate?
Resolution
280 nm (i-line)[1]
Accurate?
Resolution
0.45 μm (i-line)[2]
Accurate?
Resolution
<180 nm (DUV, single exposure)[3]
Accurate?
Resolution
Dense <200 nm, isolated <150 nm (DUV)[4]
Accurate?
Exposure wavelength
365 nm (i-line)[1]
Accurate?
Exposure wavelength
248 nm (DUV, KrF)[3]
Accurate?
Overlay accuracy
≤40 nm[1]
Accurate?
Overlay accuracy
90 nm[2]
Accurate?
Overlay accuracy
<30 nm (topside)[3]
Accurate?
Overlay accuracy
Better than 30 nm[4]
Accurate?
Numerical aperture
0.48 to 0.60[1]
Accurate?
Numerical aperture
0.40 to 0.63 (DUV)[3]
Accurate?
Reticle size
152.40 mm x 152.40 mm (i-line)[1]
Accurate?
Reticle size
6 in x 6 in (DUV)[3]
Accurate?
Exposure method
Step and repeat[1]
Accurate?
Reticle size
152.40 mm x 152.40 mm[1]
Accurate?
Reticle thicknesses supported
3.05 mm, 3.81 mm, 6.35 mm[1]
Accurate?
Exposure wavelength
365 nm near-UV light[2]
Accurate?
Minimum feature size
450 nm[2]
Accurate?
Alignment between lithographic layers
90 nm[2]
Accurate?
Maximum die area per exposure
18 mm by 22.4 mm[2]
Accurate?
Exposure wavelength
248 nm[3]
Accurate?
Light source
KrF laser source[3]
Accurate?
Exposure mode
step and repeat[1]
Accurate?
Exposure wavelength (PAS 5500/275D & PAS 5500/60)
365 nm (i-line)[1]
Accurate?
Exposure wavelength (PAS 5500/350C)
248 nm (DUV KrF)[3]
Accurate?
Resolution (PAS 5500/275D)
280 nm[1]
Accurate?
Resolution (PAS 5500/60)
450 nm[2]
Accurate?
Resolution (PAS 5500/350C)
<180 nm (single exposure)[3]
Accurate?
Overlay accuracy (PAS 5500/275D)
40 nm[1]
Accurate?
Overlay accuracy (PAS 5500/60)
90 nm[2]
Accurate?
Overlay accuracy (PAS 5500/350C)
<30 nm (topside alignment)[3]
Accurate?
Numerical aperture (PAS 5500/275D)
0.48 to 0.60[1]
Accurate?
Numerical aperture (PAS 5500/350C)
0.40 to 0.63 (conventional); up to 0.70 (tunable range)[3]
Accurate?
Reticle size (PAS 5500/275D)
152.40 mm x 152.40 mm[1]
Accurate?
Reticle size (PAS 5500/60)
5 inch[2]
Accurate?
Reticle size (PAS 5500/350C)
6 inch square, 0.25 inch thick (standard)[3]
Accurate?
Variant exposure wavelength
365 nm[2]
Accurate?
Variant minimum feature size
450 nm[2]
Accurate?
Variant alignment between lithographic layers
90 nm[2]
Accurate?
Variant maximum die area per exposure
18 mm by 22.4 mm[2]
Accurate?
Variant mask size
5 inch[2]
Accurate?
Variant process wavelength
248 nm[3]
Accurate?
Variant laser source
KrF laser[3]
Accurate?

Performance3

Alignment
Topside and backside alignment[3]
Accurate?
Backside alignment
Available on PAS 5500/275D and PAS 5500/350C[1]
Accurate?
Type
High throughput i-line stepper[1]
Accurate?

Configuration & options26

Technology
i-line stepper[1]
Accurate?
Reduction
5X reduction[1]
Accurate?
Reduction ratio
5X for i-line models; 4X for DUV model[1]
Accurate?
Maximum field size
22 mm x 22 mm or 27.4 mm x 14.7 mm (PAS 5500/275D), 18 mm x 22.4 mm (PAS 5500/60), 2.2 cm x 2.2 cm (PAS 5500/350C)[1]
Accurate?
Reduction factor
5X[1]
Accurate?
Reduction factor
5:1[2]
Accurate?
Reduction factor
4X[3]
Accurate?
Maximum field size
22 mm x 22 mm or 27.4 mm x 14.7 mm (i-line)[1]
Accurate?
Maximum die area (field)
18 mm x 22.4 mm (i-line)[2]
Accurate?
Maximum image field
22 mm x 27 mm usable (DUV)[4]
Accurate?
Reduction
5X[1]
Accurate?
Generation
i-line[1]
Accurate?
Reduction imaging
5:1 reducing stepper[2]
Accurate?
Type
Photolithography equipment[3]
Accurate?
Reduction
4x or 5x[3]
Accurate?
Production span
Produced until 2010[3]
Accurate?
Reduction factor (PAS 5500/275D & PAS 5500/60)
5X[1]
Accurate?
Reduction factor (PAS 5500/350C)
4X[3]
Accurate?
Maximum field size (PAS 5500/275D)
22 mm x 22 mm or 27.4 mm x 14.7 mm[1]
Accurate?
Maximum field size (PAS 5500/60)
18 mm x 22.4 mm[2]
Accurate?
Maximum field size (PAS 5500/350C)
2.2 cm x 2.2 cm (square)[3]
Accurate?
Projection mode
step and repeat[1]
Accurate?
Variant
PAS 5500/60 i-line stepper[2]
Accurate?
Variant reduction imaging
5:1 reducing stepper[2]
Accurate?
Variant first introduced
2000[3]
Accurate?
Variant produced until
2010[3]
Accurate?

Vintage & configurations

  1. 1995-06-30ASML PAS 5500/400 release[5]

    The PAS 5500/400 step & scan system is described as released by ASML in 1995.

  2. 2000Production start[3]

    PAS 5500/350C was first introduced in 2000.

  3. 2010Production end[3]

    PAS 5500/350C was produced until 2010.

Documented models & variants

DesignationGenerationVintageChangesSource
PAS 5500/275Di-line—High-throughput i-line stepper using 365 nm light; 5X reduction and projection capability; automated wafer handling for substrates from 200 mm diameter wafers down to small pieces.nist.gov[1]
PAS 5500/60i-line—Automatic 100 mm wafer cassette processing capability; 365 nm near-UV light; minimum feature size of 450 nm; 150 mm capable with advanced notice.snfguide.stanford.edu[2]
PAS 5500/350C—2000–2010DUV photolithography stepper using 248 nm KrF laser source; 4x or 5x reduction; high throughput; handles 100 mm wafers by default and 150 mm on request.epfl.ch[3]
PAS 5500/300DUV—Described as a DUV stepper configured for 4-inch wafers.wiki.nanotech.ucsb.edu[4]
PAS 5500/200i-line—Described as a 5X reduction, i-line stepper for 6 inch wafers using 6 inch reticles, with 350 nm resolution, 0.48-0.60 variable numerical aperture, 22x22 mm maximum field size, and better than 50 nm overlay capability.manualslib.com[6]
PAS 5500/400Step & Scan1995Described as the second step & scan system released by ASML, with a 4X reduction ratio and maximum long-term mask overlay of 35 nm.chiphistory.org[5]
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What replaced it?

Alternatives

Tools documented as functional equivalents — same process step and wafer size, from a different manufacturer. Each equivalence cites its source.

  • predecessorASML PAS 2000— ASML developed the PAS 5500 after the PAS 2000; the PAS 5500 became the company's first commercial breakout.source[7]

Where are the manuals?

Publicly hosted documents referencing this tool, linked at their original location. Hosted by the linked institutions — availability may change.

Generated from public-source data on file. Enter your email to access — nothing is published; details are routed privately.

Not publicly documented

Field notes

No research found yet — worked with this tool? Share what you know.

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Frequently asked questions

What exposure wavelength does the PAS 5500/275D use?

It uses 365 nm wavelength light.[1]

What resolution is given for the PAS 5500/275D?

It is capable of 280 nm resolution.[1]

What substrate sizes are supported on the PAS 5500/275D?

The tool supports 75 mm, 100 mm, 150 mm, and 200 mm wafers, and small pieces can be processed on carrier wafers.[1]

What light source does the PAS 5500/350C use?

It uses DUV light from a KrF laser source at 248 nm.[3]

Not publicly documented

The following facts about the PAS 5500 are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.

  • The control-system platform and OS era of the PAS 5500 are not on record.

    Answerable by: an engineer who operated it or OEM installation records

  • No publicly documented compatible parts, consumables, or accessories for the PAS 5500 are on record.

    Answerable by: an OEM parts catalog or a service engineer

Sources & citations

Sources (11)Every fact above is drawn from these public sources
  1. [1]nist.gov — nist.govnist.gov
  2. [2]snfguide.stanford.edu — snfguide.stanford.edusnfguide.stanford.edu
  3. [3]epfl.ch — epfl.chepfl.ch
  4. [4]wiki.nanotech.ucsb.edu — wiki.nanotech.ucsb.eduwiki.nanotech.ucsb.edu
  5. [5]chiphistory.org — chiphistory.orgchiphistory.org
  6. [6]manualslib.com — manualslib.commanualslib.com
  7. [7]en.wikipedia.orgen.wikipedia.org
  8. [8]Equipment Resources | CNF — cnf.cornell.educnf.cornell.edu
  9. [9]Lithography — tudelft.nltudelft.nl
  10. [10]ASML PAS 5500/200 &#8211; Stepper | UCLA Nanolab — nanolab.ucla.edunanolab.ucla.edu
  11. [11]ASML: Products - TWINSCAN NXT:1970Ci — asml.com (Sep 15, 2016)web.archive.org
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Last updated Oct 8, 2026.

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