Waferpedia

EV Group

510 Wafer

The EV Group 510 Wafer is a manual wafer load substrate bonder. The EV Group 510 Wafer is capable of fusion and thermal compression bonding. The EV Group 510 Wafer has a max bond force of 10 kN.[1][2][3]

510 Wafer — Inventory photo
Fig. 01510 WaferInventory photo[1]

Wafer size

Manual wafer load substrate bonder

Power

Max voltage 2 kV; max current 50 mA[3]

Vacuum

High-vacuum capable bond chamber[1]

Performance

± 1.5%[1]

What it is

The EV Group 510 Wafer is a wafer bonder for packaging and bonding applications.[2]

The EVG 510 is a manual wafer load substrate bonder with a high-vacuum capable bond chamber and Windows based control software and operation interface. The EVG 510 is a semi-automated wafer bonding system for research and low-volume production use.[1][3]

How it works

The EVG 510 supports anodic, glass frit, solder, eutectic, transient liquid phase, and direct bonding. The EVG 510 uses an easy access bond chamber and tooling design for quick retooling between wafer sizes and processes. The EVG 510 bond chamber can be configured with different tooling sets that include the wafer chuck, fixture, pressure plates, and electrodes.[3][4]

The EVG 510 applies tool force, heater temperature, chamber vacuum, and bias voltage during bonding. The EVG 510 uses separate top and bottom heaters, and the available bond settings include chamber pressure set point, temperature ramp speed, tool force, and voltage bias.[5][4]

Where it fits in the process flow

The EVG 510 sits in the wafer bonding step after surface preparation and, when needed, after wafer alignment. The EVG 510 is part of a bonding line that also includes surface activation, wafer cleaning, pre-bond inspection, and bond alignment tools.[4]

Applications

The EVG 510 is used for bonding wafers in research, development, and low-volume production settings. The EVG 510 supports wafer stacks made from materials and surface combinations used in semiconductor and microsystem bonding flows, including silicon, glass, oxides, nitrides, polymers, metals, and eutectic metal alloys.[3][4]

What do the numbers mean?

Power & electrical1

Power supply for anodic bonding
Max voltage 2 kV; max current 50 mA[3]
Accurate?

Vacuum & pumping7

High-vacuum capable bond chamber[1]
Accurate?
Temperature uniformity
± 1,5 % Turbo pump and controller[1]
Accurate?
Roughing pump[1]
Accurate?
Bond chamber
High-vacuum capable bond chamber[2]
Accurate?
Turbo pump and controller
Included[1]
Accurate?
Roughing pump
Included[1]
Accurate?
Vacuum
Standard: 0.1 mbar; optional: 1E-5 mbar[3]
Accurate?

Wafer handling4

Wafer size
Manual wafer load substrate bonder[1]
Accurate?
Model
510 Wafer[1]
Accurate?
Wafer size
2, 3, 4, 5, 6, 8, 12 inch[1]
Accurate?
Wafer handling
Manual wafer load substrate bonder[2]
Accurate?

Performance1

Temperature uniformity
± 1.5%[1]
Accurate?

Control & software4

Windows based control software and operation interface[1]
Accurate?
System computer, monitor, and keyboard[1]
Accurate?
Control software
Windows based control software and operation interface[1]
Accurate?
System computer, monitor, and keyboard
Included[1]
Accurate?

Configuration & options19

Refurbished[1]
Accurate?
Capable of fusion & thermal compression bonding[1]
Accurate?
Max Bond Force
10 kN[1]
Accurate?
Top side heater
550°C max. in 1°C steps[1]
Accurate?
Bottom side heater
550°C max. in 1°C steps[1]
Accurate?
System Chiller[1]
Accurate?
Load/unload tool[1]
Accurate?
PDF Operations Manual[1]
Accurate?
Manufacturer
EV Group[1]
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Category
Packaging & Bonding[2]
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Bonding capability
Fusion and thermal compression bonding[1]
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System chiller
Included[1]
Accurate?
Load/unload tool
Included[1]
Accurate?
Max temperature
550 °C[3]
Accurate?
Loading chamber
Manual[3]
Accurate?
Max contact force
10, 20, 60 kN[3]
Accurate?
Heater size
150 mm, 200 mm[3]
Accurate?
Single chips processing
Yes[3]
Accurate?
Active water cooling
For bottom side[3]
Accurate?
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What does it need to run?

Site utility requirements, footprint, and infrastructure needed to install and operate this tool. Sourced from public records.

  • ConfigurationHigh-vacuum capable bond chamber[1]
  • Temperature uniformity± 1,5 % Turbo pump and controller[1]
  • ConfigurationRoughing pump[1]
  • Bond chamberHigh-vacuum capable bond chamber[2]
  • Turbo pump and controllerIncluded[1]
  • Roughing pumpIncluded[1]
  • VacuumStandard: 0.1 mbar; optional: 1E-5 mbar[3]
  • Power supply for anodic bondingMax voltage 2 kV; max current 50 mA[3]

Where are the manuals?

Generated from public-source data on file. Enter your email to access — nothing is published; details are routed privately.

Not publicly documented

Field notes

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Frequently asked questions

What bonding processes does the EVG 510 support?

The EVG 510 supports anodic, glass frit, solder, eutectic, transient liquid phase, and direct bonding.[3]

Not publicly documented

The following facts about the 510 Wafer are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.

  • No publicly documented production dates or lifecycle milestones (introduction, end of production, EOL) for the 510 Wafer are on record.

    Answerable by: OEM historical records or a trade-press announcement

  • No publicly documented variants, configuration options, or revision breakpoints of the 510 Wafer are on record.

    Answerable by: an OEM product catalog or an engineer who ordered or specified the tool

  • The control-system platform and OS era of the 510 Wafer are not on record.

    Answerable by: an engineer who operated it or OEM installation records

  • No publicly documented failure modes or field errata for the 510 Wafer are on record.

    Answerable by: a field service engineer, process engineer, or maintenance technician

  • The process node or technology generation of the 510 Wafer is not on record.

    Answerable by: an OEM datasheet or a fab qualification report

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Sources & citations

Sources (5)Every fact above is drawn from these public sources
  1. [1]Inventory photo
  2. [2]waferpedia.com — waferpedia.comwaferpedia.com
  3. [3]evgroup.com — evgroup.comevgroup.com
  4. [4]EVG 510, wafer to wafer bonding line ‒ Center of MicroNanoTechnology CMi ‐ EPFL — epfl.chepfl.ch
  5. [5]https://www.epfl.ch/research/facilities/cmi/wp-content/uploads/2024/10/EVG510_manual_2024.pdf — epfl.chepfl.ch
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Last updated Oct 10, 2026.

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