KLA
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The Candela 8720 is an advanced surface inspection system from KLA designed for the LED, photonics, communications, and compound semiconductor markets. The Candela 8720 employs proprietary optical technology to simultaneously measure scatter intensity, topographic variations, surface reflectivity, phase shift and photoluminescence. The Candela 8720 operates in three modes: high-throughput, standard resolution, and high resolution.[1]

The KLA Candela 8720 is an advanced surface inspection system designed for compound semiconductor wafers. The system is used primarily in the LED, photonics, and communications markets. The Candela 8720 captures a variety of mission-critical substrate and epitaxial defects. The system supports wafer sizes of 4, 5, 6, and 8 inches.[2][1][3]
The Candela 8720 employs proprietary optical technology to simultaneously measure scatter intensity at varying degrees of incidence, topographic variations, surface reflectivity, phase shift, and photoluminescence. The system uses red laser and violet laser illumination for its multiple detection channels. The tool can be operated in three modes: high-throughput, standard resolution, and high resolution. In high-throughput mode, the Candela 8720 functions as a simple particle counter. In the advanced classification mode, multiple detection channels enable accurate detection and classification of various defect types. The inspection method achieves full-surface coverage in minutes, producing high-resolution images and wafer maps with automatically classified defects.[1][3]
The Candela 8720 is used after metal-organic chemical vapor deposition (MOCVD) epitaxial growth processes. The system enables automated wafer inspection with statistical process control (SPC) methodology. The tool helps minimize MOCVD reactor process excursions and increases MOCVD reactor uptime. Implementation of the Candela 8720 can significantly cut yield loss due to epi defects.[1][3]
The Candela 8720 is intended for the LED, photonics, communications, and other compound semiconductor markets. The system is sensitive to common yield-impacting defects including micro-pits, cracks, hexagonal bumps, showerhead droplets, crescents, scratches, and other topographic defects. The system can detect and classify both macro and micro defects on compound semiconductor substrates such as silicon, sapphire, patterned sapphire (PSS), silicon carbide (SiC), and gallium nitride (GaN). The Candela 8720 is suitable for both process development and high-volume manufacturing process control.[1][3]
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The Candela 8720 supports wafer sizes of 4, 5, 6, and 8 inches.[2]
The system can be operated in three modes: high-throughput, standard resolution, and high resolution.[1][3]
The system detects micro-pits, cracks, hexagonal bumps, showerhead droplets, crescents, scratches, and other topographic defects.[1][3]
Yes, the system measures photoluminescence along with scatter, topography, reflectivity, and phase shift.[1][3]
The following facts about the Candela 8720 are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.
No publicly documented production dates or lifecycle milestones (introduction, end of production, EOL) for the Candela 8720 are on record.
Answerable by: OEM historical records or a trade-press announcement
No publicly documented variants, configuration options, or revision breakpoints of the Candela 8720 are on record.
Answerable by: an OEM product catalog or an engineer who ordered or specified the tool
The control-system platform and OS era of the Candela 8720 are not on record.
Answerable by: an engineer who operated it or OEM installation records
No publicly documented failure modes or field errata for the Candela 8720 are on record.
Answerable by: a field service engineer, process engineer, or maintenance technician
The process node or technology generation of the Candela 8720 is not on record.
Answerable by: an OEM datasheet or a fab qualification report
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Last updated Oct 1, 2026.