Waferpedia

Oxford Instruments

800

DepositionOxford Instruments 800 family
Research Quality: 30% complete

Provisional entry — research in progress

This page was generated automatically from cited public sources and hasn't completed the full research pass yet. Every specification shown carries its source; more detail is added as research completes.

800 — Inventory photo
Fig. 01800Inventory photo[1]

Power

13.56 MHz[3]

Vacuum

down to -150 °C[2]

Gas delivery

4, 8, or 12 lines[2]

Optics

up to 20 nm/min[3]

What is it?

The Oxford Instruments 800 is a plasma-enhanced chemical vapor deposition (PECVD) system.

What do the numbers mean?

Power & electrical3

RF frequency
13.56 MHz[3]
Accurate?
Low frequency range
100–350 kHz[3]
Accurate?
Mains power
50/60 Hz[3]
Accurate?

Vacuum & pumping1

Cryogenic temperature option
down to -150 °C[2]
Accurate?

Wafer handling2

Wafer capacity (300 mm)
1[2]
Accurate?
Substrate temperature range
up to 400 °C[2]
Accurate?

Gas & chemistry2

Gas line options
4, 8, or 12 lines[2]
Accurate?
Process gases
SiH4, NH3, N2O, CH4, N2, Ar, He, CF4, O2[3]
Accurate?

Optics & imaging2

End-point detection
Laser interferometry or optical emission spectrometry (OES)[2]
Accurate?
Deposition rate (SiNx, NH3-free process)
up to 20 nm/min[3]
Accurate?

Control & software1

Stress control
Pulsed HF/LF power mixing[3]
Accurate?

Configuration & options2

Table diameter
380 mm or 460 mm[2]
Accurate?
Process configurations
PECVD, RIE, RIE/PE dual mode, ICP[2]
Accurate?

Vintage & configurations

Documented models & variants

DesignationGenerationVintageChangesSource
800 Plus (Plasmalab800Plus)——Larger table (380 mm or 460 mm) and support for 300 mm wafersnanofab.utah.edu[2]
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What does it need to run?

Site utility requirements, footprint, and infrastructure needed to install and operate this tool. Sourced from public records.

  • Cryogenic temperature optiondown to -150 °C[2]
  • Gas line options4, 8, or 12 lines[2]
  • RF frequency13.56 MHz[3]
  • Low frequency range100–350 kHz[3]
  • Process gasesSiH4, NH3, N2O, CH4, N2, Ar, He, CF4, O2[3]
  • Mains power50/60 Hz[3]

Where are the manuals?

Generated from public-source data on file. Enter your email to access — nothing is published; details are routed privately.

Not publicly documented

Field notes

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Frequently asked questions

What type of system is the Oxford 800?

The Oxford 800 is a plasma-enhanced chemical vapor deposition (PECVD) system.[1]

Not publicly documented

The following facts about the 800 are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.

  • No publicly documented production dates or lifecycle milestones (introduction, end of production, EOL) for the 800 are on record.

    Answerable by: OEM historical records or a trade-press announcement

  • The control-system platform and OS era of the 800 are not on record.

    Answerable by: an engineer who operated it or OEM installation records

  • No publicly documented failure modes or field errata for the 800 are on record.

    Answerable by: a field service engineer, process engineer, or maintenance technician

  • The process node or technology generation of the 800 is not on record.

    Answerable by: an OEM datasheet or a fab qualification report

  • No publicly documented compatible parts, consumables, or accessories for the 800 are on record.

    Answerable by: an OEM parts catalog or a service engineer

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Sources & citations

Sources (3)Every fact above is drawn from these public sources
  1. [1]Inventory photo
  2. [2]nanofab.utah.edu — nanofab.utah.edunanofab.utah.edu
  3. [3]waferpedia.comwaferpedia.com
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Last updated Oct 1, 2026.

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