Tokyo Electron
NT 333
Provisional entry — research in progress
This page was generated automatically from cited public sources and hasn't completed the full research pass yet. Every specification shown carries its source; more detail is added as research completes.
Tokyo Electron NT 333 is TEL's first semi-batch chamber for ALD. Tokyo Electron NT 333 has a wafer size of 300 mm. Tokyo Electron NT 333 uses a 2-chamber reactor.[1]
What it is
The Tokyo Electron NT 333 is an atomic layer deposition (ALD) system. The NT 333 is Tokyo Electron's first semi-batch chamber for ALD. The tool is designed for 300 mm wafer processing.[1]
How it works
The NT 333 employs a spatial ALD method rather than conventional time-divided ALD. In spatial ALD, the chamber is partitioned into complementary sections that allow simultaneous exposure to and adsorption of precursors and reactants in a continuous mode. One ALD cycle is completed by one rotation of the wafer stage. Multiple substrates can be processed simultaneously within each chamber.[1]
The system includes a unique plasma shield that mitigates plasma damage while maintaining high stage rotation speeds. The NT 333 supports both thermal and plasma-enhanced ALD processes. High stage rotation speeds and an optimized gas delivery system enable high productivity by well-isolated reaction zones.[1]
Where it fits in the process flow
The NT 333 is capable of operating at low temperatures and provides tunable film stresses. The tool includes pre- or post-treatment steps within each ALD cycle to enhance film quality.[1]
Applications
The NT 333 deposits silicon dioxide (SiO2), silicon nitride (SiN), and high-k dielectric films. The system processes silicon (Si) and silicon-on-insulator (SOI) substrates. The tool is suited for applications requiring high step coverage, high film quality, high throughput, stress controllability, and low plasma damage.[1]
What do the numbers mean?
Wafer handling9
Performance1
- Features
- High step coverage, High quality film, High throughput, Stress controllability, Low plasma damage[1]
Configuration & options9
Where are the manuals?
Generated from public-source data on file. Enter your email to access — nothing is published; details are routed privately.
Not publicly documented
Field notes
No research found yet — worked with this tool? Share what you know.
Frequently asked questions
Not publicly documented
The following facts about the NT 333 are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.
No publicly documented production dates or lifecycle milestones (introduction, end of production, EOL) for the NT 333 are on record.
Answerable by: OEM historical records or a trade-press announcement
No publicly documented variants, configuration options, or revision breakpoints of the NT 333 are on record.
Answerable by: an OEM product catalog or an engineer who ordered or specified the tool
The control-system platform and OS era of the NT 333 are not on record.
Answerable by: an engineer who operated it or OEM installation records
No publicly documented failure modes or field errata for the NT 333 are on record.
Answerable by: a field service engineer, process engineer, or maintenance technician
The process node or technology generation of the NT 333 is not on record.
Answerable by: an OEM datasheet or a fab qualification report
No research found yet — worked with this tool? Share what you know.
Sources & citations
Sources (3)Every fact above is drawn from these public sources
- [1]tel.com — tel.comtel.com
- [2]Equipment inventory listing
- [3]Equipment inventory listing
Last updated Oct 7, 2026.
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