Waferpedia

Comparison ledger

2600 G 3 IC R MOCVD Reactorversus0020 18698 Part

Aixtron 2600 G 3 IC R MOCVD Reactor, Applied Materials 0020 18698 Part, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
0020 18698 PartApplied Materials
OEMAixtronApplied Materials
CategoryDepositionDeposition
Wafer size——
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyAixtron AIX 2600Applied Materials 0020 18698 Part
Specifications
Software VersionAiIXACT 5.8.3.16[1]—
PLC3.1.3[1]—
ConfigurationSLC[1]Dial Cover, Side Local Match, Hdpcvd, Ul[2]
ProcessAlInGaP MOCVD Epitaxy[1]—
Wafer7 x 6"[1]—
Metal Organic SourcesTMIn x 3, TMGa x 2, TMAl x 1, Cp2Mg x 1, DIPTe x 1, Spare x 3[1]—
Hydride SourcesPH3 x 1, AsH3 x 1, 100 ppm SiH4 in Ar x 1[1]—
Concentration MonitorsEpison4 x 3 for TMIn[1]—
PurifiersEntegris Getter for H2[1]—
Heating SystemRF Coil with Trumpf Huttinger RF Generator BIG 120/50[1]—
Glove BoxMBraun Nitrogen Glovebox with Controller[1]—
Process PumpKashiyama SDE 300[1]—
DOR & Glove Box PumpsAdixen ACP - 15G x 2[1]—
Reactor ChillerAffinity Recirculating Closed Loop Chiller[1]—
MakeAixtron[1]—
Model2600 G 3 IC R[1]—
Equipment typeMOCVD Reactor[1]—
SLClisted[1]—
Quartz Ceilingwith Temperature Control[1]—
In-Situ Pyrometryavailable[1]—
Gas Foil Rotation (GFR)Active[1]—
Vintage2007[1]—

Plan your fab

Building a Deposition process? Get a complete equipment list.

Open the fab equipment planner →
Sources (2)Every fact above is drawn from these public sources
  1. [1]inventory listing
  2. [2]inventory listing