Aixtron
The Aixtron 2600 G 3 IC R MOCVD Reactor is a metal organic chemical vapor deposition reactor. The Aixtron 2600 G 3 IC R MOCVD Reactor is configured for AlInGaP MOCVD epitaxy. The Aixtron 2600 G 3 IC R MOCVD Reactor uses 7 x 6-inch wafers.[1][2]

The Aixtron 2600 G 3 IC R uses an RF coil heating system with a Trumpf Huttinger RF generator, gas foil rotation, and in-situ pyrometry.[1][2]
The Aixtron 2600 G 3 IC R includes a quartz ceiling with temperature control, a custom built exhaust system, a process pump, glove box pumping, and an abatement subsystem.[1][2]
The Aixtron 2600 G 3 IC R is used for AlInGaP MOCVD epitaxy.[1][2]
The Aixtron 2600 G 3 IC R uses metal organic sources including TMIn, TMGa, TMAl, Cp2Mg, and DIPTe, and hydride sources including PH3, AsH3, and 100 ppm SiH4 in Ar.[1][2]
The Aixtron 2600 G 3 IC R includes concentration monitors for TMIn and an Entegris getter for hydrogen.[1][2]
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The following facts about the 2600 G 3 IC R MOCVD Reactor are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.
No publicly documented production dates or lifecycle milestones (introduction, end of production, EOL) for the 2600 G 3 IC R MOCVD Reactor are on record.
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No publicly documented variants, configuration options, or revision breakpoints of the 2600 G 3 IC R MOCVD Reactor are on record.
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The control-system platform and OS era of the 2600 G 3 IC R MOCVD Reactor are not on record.
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Last updated Oct 11, 2026.
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