Comparison ledger
Aixtron AIX G 4, Applied Materials 0010-13622 RF Match for, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | AIX G 4Aixtron | 0010-13622 RF Match forApplied Materials |
|---|---|---|
| OEM | Aixtron | Applied Materials |
| Category | Deposition | Deposition |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Aixtron AIX | Applied Materials 0010-13622 RF Match for |
| Specifications | ||
| Phase | 3 Phase[1] | — |
| Voltage | 208V[1] | — |
| Process | EPI[1] | — |
| Process Gas | NH3, H2, SiH4[1] | — |
| Configuration | Glove Box[1] | High Efficiency HE RF Match-Bias[2] |
| Wafer Size | 4 inch[1] | — |
| Power | 3 Phase - 208V[1] | — |
| Vintage | 2009[1] | — |
| Glove Box | Included[1] | — |
| GMS | Included[1] | — |
| Main Pump | Included[1] | — |
| Particle Filter | Included[1] | — |
| Cable Box | Included[1] | — |
| RF Generator | Included[1] | — |
| Transformer | Included[1] | — |
| Model | — | 0010-13622[2] |
| Product Type | — | RF Match for PVD (Physical Vapor Deposition)[2] |
| Feature | — | High Efficiency HE RF Match-Bias[2] |
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