Aixtron
AIX G 4
The Aixtron AIX G 4 is a deposition system for epitaxial processes. The Aixtron AIX G 4 processes 4-inch wafers for GaN deposition. The Aixtron AIX G 4 uses process gases NH3, H2, and SiH4.[1]
What it is
The Aixtron AIX G 4 is a deposition system for epitaxial growth of gallium nitride (GaN).[1]
How it works
General reference — not yet source-verifiedMOCVD reactors like the AIX G 4 operate by delivering metalorganic precursors and hydride gases into a heated reaction chamber, where the gases decompose and deposit epitaxial layers onto a heated substrate.
Where it fits in the process flow
General reference — not yet source-verifiedThe AIX G 4 is used in the front-end of semiconductor fabrication for epitaxial deposition, a step that follows substrate cleaning and precedes subsequent device patterning and contact formation.
For GaN-based devices, the system typically grows buffer layers, n-type and p-type GaN, and sometimes InGaN quantum wells, with the substrate prepared upstream and the epiwafer moving downstream to lithography and etch processes.
What do the numbers mean?
Power & electrical5
- RF Generator[1]
Vacuum & pumping2
- Main Pump[1]
Wafer handling1
Gas & chemistry4
Configuration & options13
What does it need to run?
Site utility requirements, footprint, and infrastructure needed to install and operate this tool. Sourced from public records.
Where are the manuals?
Generated from public-source data on file. Enter your email to access — nothing is published; details are routed privately.
Not publicly documented
Field notes
No research found yet — worked with this tool? Share what you know.
Not publicly documented
The following facts about the AIX G 4 are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.
No publicly documented production dates or lifecycle milestones (introduction, end of production, EOL) for the AIX G 4 are on record.
Answerable by: OEM historical records or a trade-press announcement
No publicly documented variants, configuration options, or revision breakpoints of the AIX G 4 are on record.
Answerable by: an OEM product catalog or an engineer who ordered or specified the tool
The control-system platform and OS era of the AIX G 4 are not on record.
Answerable by: an engineer who operated it or OEM installation records
No publicly documented failure modes or field errata for the AIX G 4 are on record.
Answerable by: a field service engineer, process engineer, or maintenance technician
The process node or technology generation of the AIX G 4 is not on record.
Answerable by: an OEM datasheet or a fab qualification report
No research found yet — worked with this tool? Share what you know.
Sources & citations
Sources (1)Every fact above is drawn from these public sources
- [1]Inventory photo
Last updated Aug 17, 2026.
Compare with similar tools
View all →
The Applied Materials 0010-13622 is an RF match unit intended for PVD (Physical Vapor Deposition) described as a High Efficiency HE RF Match-Bias.
The Applied Materials 0020 12458 Part is an insulator, side match component for the Hdp-Cvd Ultima Plus system.