Comparison ledger
AJA ATC Orion, Angstrom Engineering EvoVac, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | ATC OrionAJA | EvoVacAngstrom Engineering |
|---|---|---|
| OEM | AJA | Angstrom Engineering |
| Category | Deposition | Deposition |
| Wafer size | 6 in | 6 in |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | AJA ATC Orion | Angstrom Engineering EvoVac |
| Specifications | ||
| Tool type | Physical vapor deposition (PVD) tool[1] | Load-locked PVD tool[4] |
| Deposition method | Magnetron sputtering[1] | — |
| Magnetron sputtering sources | Stiletto (HV) magnetron sputtering source; A330-XP-O (UHV) magnetron sputtering source[1] | — |
| Vacuum load lock | Turbo-pumped vacuum load lock with 6-position cassette[1] | — |
| Substrate size | Up to 6 in[1] | — |
| Reactive sputtering gases | Oxygen and nitrogen[1] | — |
| Power sources | DC and RF generators[1] | — |
| Sputter source capacity | Up to 5 3 in sputter sources[1] | — |
| Options | RF bias option[1] | — |
| Control system | Phase II-J Computer Control System[1] | — |
| Number of sputter sources | Up to 5 x 3 inch[1] | — |
| Sputter source types | Stiletto (HV) magnetron sputtering source; A330-XP-O (UHV) magnetron sputtering source[1] | — |
| Load lock | Turbo-pumped vacuum load lock with 6 position cassette[1] | — |
| Reactive sputtering | Capable of reactive sputtering with oxygen and nitrogen[1] | — |
| Generators | DC and RF generators[1] | — |
| RF bias option | Available[1] | — |
| Computer control system | Phase II-J Computer Control System[1] | — |
| Deposition technique | Magnetron sputtering (DC and RF)[1] | — |
| Reactive gases | Oxygen and nitrogen (also argon)[1] | — |
| Magnetron sources | Stiletto (HV) and A330-XP-O (UHV)[1] | — |
| Number of magnetron cathodes (twin chamber) | Four per deposition chamber[2] | — |
| Substrate heating (twin chamber) | Quartz lamp up to 800°C[2] | — |
| Substrate heating (single chamber) | Quartz halogen lamp, RT – 850°C[3] | — |
| Base pressure (twin chamber) | < 3x10^-7 Torr[2] | — |
| Pumping (twin chamber) | 800 L/s turbomolecular pump on each chamber[2] | — |
| Primary process | — | Electron beam evaporation[4] |
| Additional deposition modes | — | Resistive thermal evaporation, ion assisted deposition, and sputter deposition[4] |
| Wafer size | — | Wafers to 6 in[4] |
| E-beam source | — | 6 pocket E-beam source[4] |
| Crucible volume | — | 15 cc crucibles[4] |
| Sweep controller | — | Programmable 2-axis sweep controller[4] |
| Deposition control | — | Advanced multi-layer deposition control for precise layer monitoring[4] |
| Source-to-substrate distance | — | Long source to substrate distances[4] |
| Ion source | — | Kaufman gridless ion source[4] |
| In-situ functions | — | In-situ substrate pre-cleaning, low energy ion beam etching, and surface modification[4] |
| Load locked | — | yes[4] |
| E-beam source pockets | — | 6[4] |
| Crucible capacity | — | 15 cc[4] |
| Maximum wafer size | — | 6 inches[4] |
| Deposition rate | — | high[4] |
| Multi-layer deposition control | — | advanced[4] |
| Ion source type | — | Kaufman gridless[4] |
| In-situ substrate pre-cleaning | — | yes[4] |
| Low energy ion beam etching | — | yes[4] |
| Surface modification | — | yes[4] |
| Pneumatic airline filter | — | yes[4] |
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