Comparison ledger
Applied Materials 0010-14300 Magnet Assy, Axcelis GSD 200, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 0010-14300 Magnet AssyApplied Materials | GSD 200Axcelis |
|---|---|---|
| OEM | Applied Materials | Axcelis |
| Category | Ion Implantation | Ion Implantation |
| Wafer size | — | In Air Wafer Handling: |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Applied Materials 0010-14300 Magnet Assy | Axcelis GSD 200 |
| Specifications | ||
| Configuration | P4 Magnet Assy, IMP[1] | MER[2] |
| Gearbox P/N | 0010-27417[1] | — |
| Part Number | 0010-14300[1] | — |
| Description | P4 Magnet Assy, IMP[1] | — |
| Source Head | — | Enhanced Source w/ Tantalum[2] |
| Extraction | — | 90 kV / 90 kV[2] |
| Source Analyzer | — | Triple Indexed Mass Analysis Magnet & Power Supply[2] |
| RGA Resolver | — | Port[2] |
| RGA Chamber | — | Port[2] |
| HYT | — | Particle Detection Monitor[2] |
| Charge Control | — | E-Shwr IV (Fwd Bias) / P/N: 1183280[2] |
| Post Accel Elect | — | P/N: 1182480[2] |
| Flag Faraday | — | Standard[2] |
| SMIF | — | ASYST ARM 2200[2] |
| Compressor | — | 9600 & 8200[2] |
| GeF 4 (High Pressure) | — | Unit MFC[2] |
| PH 3 | — | (SDS): Unit MFC[2] |
| XE | — | Unit MFC ( E Shower not use)[2] |
| Argon (High Pressure) | — | Unit MFC[2] |
| Wafer Size | — | 6 inch (150 mm)[2] |
| Extraction Voltage | — | 90 kV / 90 kV[2] |
| Implant Angle | — | Two-axis variable (+ / - degrees in both axes)[2] |
| Disk Drive Type | — | Rotary[2] |
| Cell Controller | — | Cell 133[2] |
| Operating System | — | Sun OS[2] |
| Protocols | — | SECS-I & SECS II[2] |
| Interface | — | GM Interface & Ethernet Port[2] |
| Wafer size | — | In Air Wafer Handling:[2] |
| Dose Controller | — | Real Time Patented Dose Control[2] |
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