Axcelis

GSD 200

Ion Implantation In Air Wafer Handling:Axcelis GSD 200 family

Research Quality: 50% complete

The Axcelis GSD 200 is an ion implanter. The GSD 200 supports 6-inch and 8-inch wafers. The GSD 200 features a two-axis variable implant angle and a rotary disk drive.^[1]

GSD 200 — Inventory photo — Fig. 01GSD 200Inventory photo^[1]

Wafer size

In Air Wafer Handling:

Power

90 kV / 90 kV^[1]

Vacuum

Unit MFC^[1]

Gas delivery

(SDS): Unit MFC^[1]

What it is

General reference — not yet source-verified

The Axcelis GSD 200 is an ion implantation system used in semiconductor manufacturing.

Where it fits in the process flow

General reference — not yet source-verified

Ion implantation is a front-end doping step in semiconductor processing, and the GSD 200 fits in the sequence after wafer preparation and pattern definition steps that open regions for implantation.

Applications

General reference — not yet source-verified

Ion implantation is used to introduce controlled dopant species into semiconductor wafers for transistor, diode, and other device fabrication.

What do the numbers mean?

Power & electrical2

Source Analyzer: Triple Indexed Mass Analysis Magnet & Power Supply^[1]
Extraction Voltage: 90 kV / 90 kV^[1]

Vacuum & pumping2

GeF 4 (High Pressure): Unit MFC^[1]
Argon (High Pressure): Unit MFC^[1]

Wafer handling4

Wafer Size: 6 inch (150 mm)^[1]
Wafer Size: 8 inch (200 mm)^[3]
Wafer size: In Air Wafer Handling:^[1]
Wafer size: In-Vac Wafer Handling:^[1]

Gas & chemistry2

PH 3: (SDS): Unit MFC^[1]
XE: Unit MFC ( E Shower not use)^[1]

Control & software5

Charge Control: E-Shwr IV (Fwd Bias) / P/N: 1183280^[1]
Cell Controller: Cell 133^[1]
Operating System: Sun OS^[1]
Interface: GM Interface & Ethernet Port^[1]
Dose Controller: Real Time Patented Dose Control^[1]

Configuration & options17

Source Head: Enhanced Source w/ Tantalum^[1]
Extraction: 90 kV / 90 kV^[1]
RGA Resolver: Port^[1]
RGA Chamber: Port^[1]
HYT: Particle Detection Monitor^[1]; MER^[1]
Post Accel Elect: P/N: 1182480^[1]
Flag Faraday: Standard^[1]
SMIF: ASYST ARM 2200^[1]; Affinity Disk Chiller w/ Remote up to 50 ft^[1]
Compressor: 9600 & 8200^[1]; Ebara 40 x 20 (2)^[1]; Seiko Seiki H 2000 C^[1]; CTI OB 8^[1]
Implant Angle: Two-axis variable (+ / - degrees in both axes)^[1]
Disk Drive Type: Rotary^[1]
Protocols: SECS-I & SECS II^[1]

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What does it need to run?

Site utility requirements, footprint, and infrastructure needed to install and operate this tool. Sourced from public records.

Source AnalyzerTriple Indexed Mass Analysis Magnet & Power Supply^[1]
GeF 4 (High Pressure)Unit MFC^[1]
PH 3(SDS): Unit MFC^[1]
XEUnit MFC ( E Shower not use)^[1]
Argon (High Pressure)Unit MFC^[1]
Extraction Voltage90 kV / 90 kV^[1]

Where are the manuals?

Generated from public-source data on file. Enter your email to access — nothing is published; details are routed privately.

Not publicly documented

Field notes

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Frequently asked questions

What kinds of dopant species are commonly used?General reference — not yet source-verified

Ion implanters commonly use species such as boron, phosphorus, arsenic, and antimony, depending on whether p-type or n-type conductivity is desired. Other species may be used for specialized applications.

What does 'dose control' mean for this machine class?General reference — not yet source-verified

Dose refers to the total number of ions delivered per unit area. Implanters use Faraday cups and beam-current measurement to monitor the ion beam and stop implantation once the target dose is reached.

What factors affect the depth of implanted ions?General reference — not yet source-verified

The implantation energy determines the penetration depth, while the ion mass and the crystalline orientation of the target influence channeling and final depth distribution. Thermal anneals afterwards activate the dopants and repair damage.

Not publicly documented

The following facts about the GSD 200 are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.

No publicly documented production dates or lifecycle milestones (introduction, end of production, EOL) for the GSD 200 are on record.
Answerable by: OEM historical records or a trade-press announcement
No publicly documented variants, configuration options, or revision breakpoints of the GSD 200 are on record.
Answerable by: an OEM product catalog or an engineer who ordered or specified the tool
The control-system platform and OS era of the GSD 200 are not on record.
Answerable by: an engineer who operated it or OEM installation records
No publicly documented failure modes or field errata for the GSD 200 are on record.
Answerable by: a field service engineer, process engineer, or maintenance technician
The process node or technology generation of the GSD 200 is not on record.
Answerable by: an OEM datasheet or a fab qualification report