Comparison ledger
Axcelis 200 PCU, Axcelis GSD 200, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 200 PCUAxcelis | GSD 200Axcelis |
|---|---|---|
| OEM | Axcelis | Axcelis |
| Category | Ion Implantation | Ion Implantation |
| Wafer size | — | In Air Wafer Handling: |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | 2000 Vintage | — |
| Control system | — | — |
| Generation | — | — |
| Family | Axcelis NV GSD 200 | Axcelis GSD 200 |
| Cited variants | — | |
| Specifications | ||
| P/N | SC 4840 A[3] | — |
| Frequency | 50 Hz[3] | — |
| Phase | 3 Phase[3] | — |
| Voltage | 400 V[3] | — |
| Source Head | — | Enhanced Source w/ Tantalum[4] |
| Extraction | — | 90 kV / 90 kV[4] |
| Source Analyzer | — | Triple Indexed Mass Analysis Magnet & Power Supply[4] |
| RGA Resolver | — | Port[4] |
| RGA Chamber | — | Port[4] |
| HYT | — | Particle Detection Monitor[4] |
| Configuration | — | MER[4] |
| Charge Control | — | E-Shwr IV (Fwd Bias) / P/N: 1183280[4] |
| Post Accel Elect | — | P/N: 1182480[4] |
| Flag Faraday | — | Standard[4] |
| SMIF | — | ASYST ARM 2200[4] |
| Compressor | — | 9600 & 8200[4] |
| GeF 4 (High Pressure) | — | Unit MFC[4] |
| PH 3 | — | (SDS): Unit MFC[4] |
| XE | — | Unit MFC ( E Shower not use)[4] |
| Argon (High Pressure) | — | Unit MFC[4] |
| Wafer Size | — | 6 inch (150 mm)[4] |
| Extraction Voltage | — | 90 kV / 90 kV[4] |
| Implant Angle | — | Two-axis variable (+ / - degrees in both axes)[4] |
| Disk Drive Type | — | Rotary[4] |
| Cell Controller | — | Cell 133[4] |
| Operating System | — | Sun OS[4] |
| Protocols | — | SECS-I & SECS II[4] |
| Interface | — | GM Interface & Ethernet Port[4] |
| Wafer size | — | In Air Wafer Handling:[4] |
| Dose Controller | — | Real Time Patented Dose Control[4] |
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