Comparison ledger
Disco 321, Disco DFL7340, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 321Disco | DFL7340Disco |
|---|---|---|
| OEM | Disco | Disco |
| Category | Dicing & Grinding | Dicing & Grinding |
| Wafer size | — | 200mm |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Disco 321 | Disco DFL7340 |
| Specifications | ||
| OEM | Disco[1] | Disco[4] |
| Model | 321[1] | DFL7340[4] |
| Equipment type | Wafer Dicing Saw[1] | — |
| Facility context | Cleanroom Instrumentation[1] | — |
| Application area | Nano and Micro Fabrication[1] | — |
| Location | FNT 4.106[1] | — |
| Wafer Size | Up to 6 inches[2] | — |
| Spindle Power | 1.0 kW Synchro Spindle (or 1.5 kW Synchro Spindle in some configurations)[3] | — |
| Spindle Power (alternate) | 1500 Watt spindle[2] | — |
| Non-Contact Setup | Non Contact Setup[3] | — |
| Microscope | Microscope With Eyepiece and Shutter (or Dual Objective Microscope With Eyepiece)[3] | — |
| Broken Blade Detection | Broken Blade Detection[3] | — |
| Light Tower | Includes Light Tower[3] | — |
| Chuck Type | 6" Universal Chuck (or 6" Porous Film Frame Chuck)[2] | — |
| Wafer size capability | Up to 6" wafers[3] | — |
| Chuck | 6-inch porous film frame chuck[2] | — |
| Spindle power | 1500-watt spindle[2] | — |
| Footprint | Small footprint[2] | — |
| Setup | Non-contact setup[3] | — |
| Blade break detection | Broken blade detection[3] | — |
| Other features | Floppy drive, light tower, blade tools, manuals[3] | — |
| Process area | — | Packaging[4] |
| Compatible materials | — | Si wafers only[4] |
| Stealth dicing engine | — | SDE03 engine with λ = 1342 nm[4] |
| Maximum sample diameter | — | 200 mm[4] |
| Dicing orientation | — | Topside or backside (through tape) dicing possible[4] |
| Category | — | Packaging & Bonding[5] |
| Process | — | Laser stealth dicing of Si wafers[6] |
| Compatible material | — | Si wafers only[4] |
| Laser engine wavelength | — | λ = 1342 nm[4] |
| Process wavelength | — | IR[6] |
| Feeding speed | — | 1.0–1000 mm/s[6] |
| Position accuracy | — | 3 µm[6] |
| Surface roughness requirement | — | Dicing streets must be smooth (mirror polish) on the surface where the laser is incident[5] |
| Street clearance requirement | — | Wafer must be metal-free in a width of 0.4 × substrate thickness, centered on the dicing street[5] |
| Si resistivity requirement | — | ρ > 0.01 Ω•cm[5] |
| Automation mode | — | Fully automated mode[6] |
| Backside alignment | — | IR camera for back side alignment[6] |
| Vendor | — | Disco[4] |
| Laser wavelength | — | 1342 nm (IR)[4] |
| Laser type | — | ns-pulsed near infrared laser[7] |
| Wafer sizes supported | — | 200mm wafers or smaller (6in, 4in, 3in, coupon, wafer quarter)[6] |
| Maximum wafer thickness | — | Up to 1.5 mm thick wafers[6] |
| Dicing sides | — | Topside or backside (through tape) dicing possible[4] |
| IR camera for back side alignment | — | IR camera for back side alignment[6] |
| Feeding speed, X-axis & Y-axis | — | 1.0 – 1000 mm/s[6] |
| Position accuracy, X-axis & Y-axis | — | 3 µm[6] |
| Operation mode | — | Fully automated mode[6] |
| Process purpose | — | Laser stealth dicing of Si wafers[6] |
| At the nanoFAB | — | Staff processing only; user training not offered on this tool[7] |
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