Waferpedia

Comparison ledger

321versusMWS-SiC12F

Disco 321, Takatori MWS-SiC12F, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
321Disco
MWS-SiC12FTakatori
OEMDiscoTakatori
CategoryDicing & GrindingDicing & Grinding
Wafer size——
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyDisco 321Takatori MWS-SiC12F
Cited variants—
Specifications
OEMDisco[2]—
Model321[2]—
Equipment typeWafer Dicing Saw[2]—
Facility contextCleanroom Instrumentation[2]—
Application areaNano and Micro Fabrication[2]—
LocationFNT 4.106[2]—
Wafer SizeUp to 6 inches[3]—
Spindle Power1.0 kW Synchro Spindle (or 1.5 kW Synchro Spindle in some configurations)[4]—
Spindle Power (alternate)1500 Watt spindle[3]—
Non-Contact SetupNon Contact Setup[4]—
MicroscopeMicroscope With Eyepiece and Shutter (or Dual Objective Microscope With Eyepiece)[4]—
Broken Blade DetectionBroken Blade Detection[4]—
Light TowerIncludes Light Tower[4]—
Chuck Type6" Universal Chuck (or 6" Porous Film Frame Chuck)[3]—
Wafer size capabilityUp to 6" wafers[4]—
Chuck6-inch porous film frame chuck[3]—
Spindle power1500-watt spindle[3]—
FootprintSmall footprint[3]—
SetupNon-contact setup[4]—
Blade break detectionBroken blade detection[4]—
Other featuresFloppy drive, light tower, blade tools, manuals[4]—
Product line—MWS (Multi Wire Saw)[1]
Machine type—multi wire saw[1]
Capable materials—SiC, GaN, LT, LN, ALN, SiN, Ga2O3, Sapphire, Crystal, GaAs, GaP, InP, Neodymium magnet, Ceramics, Resin, Metal, Platinum, Silver, Gold and other hard brittle material[1]
Variable processing conditions—thin wire, high wire tension, fast wire running, extra-long time slicing process[1]

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Sources (4)Every fact above is drawn from these public sources
  1. [1]takatori-g.co.jptakatori-g.co.jp
  2. [2]tmi.utexas.edutmi.utexas.edu
  3. [3]jmind.comjmind.com
  4. [4]gtsaz.comgtsaz.com