Comparison ledger
Hamatech HMR900, Nanoscribe Photonic Professional GT, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | HMR900Hamatech | Photonic Professional GTNanoscribe |
|---|---|---|
| OEM | Hamatech | Nanoscribe |
| Category | Lithography | Lithography |
| Wafer size | 4" | 4" |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Hamatech HMR900 | Nanoscribe Photonic Professional GT |
| Cited variants | — |
|
| Specifications | ||
| Tool type | Mask processor[2] | 3D nanoprinter[1] |
| Primary use | Cr-plate wet processing or cleaning[2] | — |
| Installed media | Developing exposed resist (AZ 351B developer), Cr wet etching (TechniEtch Cr N°1), and resist stripping (AZ 400K non-diluted)[2] | — |
| Substrate size | Square plates up to 7" x 7"[2] | — |
| Supported chuck sizes | 4" x 4", 5" x 5", 6" x 6", and 7" x 7" square plates[2] | — |
| Loading | Manual loading and unloading of substrates[2] | — |
| Rotation | Direct and reverse rotation (CW, CCW)[2] | — |
| Speed accuracy | +/-1 rpm[2] | — |
| Programmable recipes | 20 recipes with 50 steps each[2] | — |
| Substrate fixation | Mechanical side edge substrate fixation; chucks for Cr plates do not use vacuum clamping[2] | — |
| Substrate handling | Manual loading and unloading[2] | — |
| Chuck size | 4" x 4", 5" x 5", 6" x 6", 7" x 7" square plates[2] | — |
| Recipe capacity | 20 recipes, 50 steps each[2] | — |
| Chemical media | AZ 351B developer, TechniEtch Cr N°1, AZ 400K non-diluted, with DI water rinse and drying[2] | — |
| Equipment type | Mask processor[2] | — |
| Process type | Cr-plate wet processing or cleaning[2] | — |
| Chemical treatment 1 | Developing exposed resist with AZ 351B developer[2] | — |
| Chemical treatment 2 | Cr wet etching with TechniEtch Cr N°1[2] | — |
| Chemical treatment 3 | Resist stripping with AZ 400K non-diluted[2] | — |
| Rinse and dry | Intermediate DI water rinse steps and final drying[2] | — |
| Supported mask and reticle types | 4, 5 and 7 inch masks for mask-aligner usage; 6 inch reticules for DUV stepper usage[2] | — |
| Recipe capability | 20 recipes with 50 steps each can be programmed[2] | — |
| Operation | manual loading and unloading of the substrates[2] | — |
| Substrate format | square plates up to 7" x 7"[2] | — |
| Supported plate sizes | 4" x 4", 5" x 5", 6" x 6", 7" x 7"[2] | — |
| Chuck type | multi-size chuck for square plates[2] | — |
| Acceleration / speed accuracy | smooth acceleration and speed accuracy +/-1 rpm[2] | — |
| Process steps | developing exposed resist, Cr wet etching, resist stripping, intermediate DI water rinse steps, and final drying[2] | — |
| Machine type | — | 3D nanoprinter[1] |
| Process | — | two-photon absorption[1] |
| Laser wavelength | — | 780 nm[1] |
| Laser type | — | femtosecond laser[1] |
| Objectives | — | 20x (air), 10x (immersion), 25x (immersion), 63x (immersion)[1] |
| 63x objective resolution | — | < 200 nm lateral dimensions; < 700 nm z-height[1] |
| 25x objective resolution | — | < 600 nm x-/y- diameter; < 2 µm z-height[1] |
| 10x objective resolution | — | < 1.2 µm x-/y- diameter; < 6 µm z-height[1] |
| 20x objective resolution | — | < 800 nm x-/y- diameter; < 5 µm z-height[1] |
| Piezo-stage travel range | — | 300 µm in all directions[1] |
| Coarse stage precision | — | lower than 1.5 µm[1] |
| High-resolution mode objective | — | 63x NA1.4, 360 µm working distance[1] |
| Micro- to mesoscale mode objective | — | 25x NA0.8, 380 µm working distance[1] |
| FAST macroscale mode objective | — | 10x NA0.3, 700 µm working distance[1] |
| Standard substrates | — | quartz, silicon, ITO-coated glass, 170 µm-thick borosilicate, microscope slides up to 26 x 76 mm, 4 inch wafers, 2 inch wafers[1] |
| Laser | — | Infrared femtosecond laser, 780 nm[1] |
| Resolution (lateral) | — | < 200 nm (with 63x objective)[1] |
| Resolution (vertical) | — | < 700 nm (with 63x objective)[1] |
| Max write area (block-free field) | — | 1000 µm (with 10x objective)[1] |
| Max structure volume | — | ~10 mm³ (FAST macroscale mode, 10x objective)[1] |
| Stage travel (piezo) | — | 300 µm in all directions[1] |
| Pattern generation software | — | Describe (slicing/hatching, converts .STL to exposure jobs)[1] |
| Sample formats | — | 25x25 mm² fused-silica, ITO-coated glass, silicon; 30 mm borosilicate; microscope slides up to 26x76 mm²; 4-inch and 2-inch wafers, thickness 350-550 µm[1] |
| Resolution (63x immersion) | — | Lateral <200 nm, axial <700 nm[1] |
| Resolution (25x immersion) | — | Lateral <600 nm, axial <2 µm[1] |
| Resolution (10x immersion) | — | Lateral <1.2 µm, axial <6 µm[1] |
| Resolution (20x air) | — | Lateral <800 nm, axial <5 µm[1] |
| Piezo stage travel | — | 300 µm in all directions[1] |
| Motorized XY stage range | — | 100 x 100 mm[3] |
| Photoresists | — | IP-Dip2, IP-S, IP-Q, IP-Visio, IP-PDMS, IPX-Q, IPX-Clear[1] |
| Substrates | — | 25x25 mm fused silica, ITO-coated glass, silicon, 30 mm borosilicate, microscope slides, 4-inch and 2-inch wafers[1] |
| Software | — | Describe (slicing/hatching), Nanowrite (operation)[1] |
| File formats | — | STL, DXF, GWL[1] |
| Writing modes | — | Dip-in laser lithography (DiLL), direct laser writing (DLW)[1] |
| Maximum structure height (various modes) | — | 10x DILL (IP-Q): 8 mm; 25x DILL (IP-S): 3 mm; 63x DILL (IP-Dip): 3 mm; Oil immersion (63x, 170 µm glass): 150 µm[4] |
| Exposure mechanism | — | Two-photon absorption[1] |
| Photoresist compatibility | — | UV-sensitive photoresists including standard i-line photoresists[1] |
| Scanning methods | — | PiezoScan mode (piezo-stage) and GalvoScan mode (galvo-mirrors)[1] |
| Objective magnifications | — | 20x (air), 10x (immersion), 25x (immersion), 63x (immersion)[1] |
| Highest resolution | — | < 200nm lateral dimensions (with 63x objective)[1] |
| Voxel aspect ratio | — | Oval shape, typical aspect ratio (z-/x- axis) of about 3.5[1] |
| High resolution mode (3D SF) objective | — | 63x NA1.4, 360um working distance, block-free printing field Ø 200 µm[1] |
| Micro- to mesoscale mode (3D MF) objective | — | 25x NA0.8, 380um working distance, block-free printing field Ø 400 µm[1] |
| FAST macroscale mode (3D LF) objective | — | 10x NA0.3, 700um working distance, block-free printing field Ø 1000 µm[1] |
| Supported input format | — | CAD-generated 3D structure with .STL format[1] |
| Tilt-correction option | — | Available (piezo-scan mode only)[1] |
| Alignment option | — | Available on existing wafer/sample topography[1] |
| Exposure method | — | two-photon absorption[1] |
| High-resolution mode block-free printing field | — | 200 µm diameter[1] |
| Micro- to mesoscale mode block-free printing field | — | 400 µm diameter[1] |
| FAST macroscale mode block-free printing field | — | 1000 µm diameter[1] |
| Listed sample holders and substrates | — | 25 x 25 mm² fused-silica substrate, 25 x 25 mm² ITO-coated glass substrate, 25 x 25 mm² silicon substrate, ∅ 30 mm thin borosilicate substrate, microscope slides up to 26 x 76 mm², 4 inch wafers, and 2 inch wafers[1] |
| Objective specifications | — | 63X immersion, 25X immersion, 10X immersion, and 20X for air[3] |
| Sample holders | — | 4 inch wafers, thickness between 350 and 550 um[1] |
| File format | — | STL[1] |
| Job code | — | GWL[1] |
| Supported materials | — | UV-sensitive photoresists, including standard i-line photoresists[1] |
| Galvo scanning | — | ultrafast galvo-mirrors scan the laser focal point in x- and y-directions[1] |
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