Comparison ledger
Nissin Exceed 3000 AH, Varian 160 XP, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | Exceed 3000 AHNissin | 160 XPVarian |
|---|---|---|
| OEM | Nissin | Varian |
| Category | Ion Implantation | Ion Implantation |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Nissin Exceed 3000 AH | Varian 160 XP |
| Cited variants |
|
|
| Specifications | ||
| Configuration | Medium current[3] | — |
| Type | medium current ion implanter[4] | — |
| Wafer size | 6-inch wafers[4] | — |
| Process mode | nanometer-scale process modes[5] | — |
| Transport system | handles thin wafers and other various substrates[5] | — |
| Average autotune time | less than 2 minutes[5] | — |
| Beam angle feedback | horizontal and vertical beam angle feedback system with multiple Faraday cup system[5] | — |
| Configuration (160 XP Ion variant) | — | 150mm High Current IMP[2] |
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