Comparison ledger
Oxford Instruments 100 ICP Fluorine, Tegal 901e, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 100 ICP FluorineOxford Instruments | 901eTegal |
|---|---|---|
| OEM | Oxford Instruments | Tegal |
| Category | Etch | Etch |
| Wafer size | — | 75 mm to 150 mm round substrates; rectangular substrates from 100 mm to 125 mm on a side |
| Process node | — | down to 0.5 micron |
| Introduced | — | 2000 |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | 900 Series |
| Family | Oxford Instruments 100 ICP Fluorine | Tegal 901e |
| Specifications | ||
| Etch Gases | SF6, CF4, O2, Ar, N2, CHF3, C4F8[1] | — |
| Cryo DRIE etch rate | up to 5 µm/min[1] | — |
| Wafer size | 4 inch, 6 inch, 8 inch (with clamp change)[1] | Wafer Size Range[3] |
| Type | — | diode plasma etcher[2] |
| Fixed electrode gap | — | 38 mm[2] |
| Round substrate handling | — | 75 mm to 150 mm round silicon and GaAs substrates[2] |
| Rectangular substrate handling | — | rectangular substrates from 100 mm to 125 mm on a side[2] |
| Design-rule suitability | — | best suited for technology design rules down to 0.5 micron[2] |
| Electrode gap | — | 38 mm fixed[2] |
| Round substrate size | — | 75 mm to 150 mm[2] |
| Rectangular substrate size | — | 100 mm to 125 mm on a side[2] |
| Best suited design rules | — | Down to 0.5 micron[2] |
| Phase | — | Power Requirements 230 V 16.0 A 50/60 Hz 1 Phase[3] |
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