Tegal
901e
The Tegal 901e is a diode plasma etcher. The Tegal 901e has a fixed electrode gap of 38 mm. The Tegal 901e can accommodate 75 mm to 150 mm round substrates and rectangular substrates from 100 mm to 125 mm on a side.[1]
Plate 01Tegal and Main Equipment Introduction Tegal 901e Tegal 903e Plasma Etcher
SemiStarWatch on YouTubePlate 02Upgrade Kit-Tegal 901e 903e 981 983 Plasma Etcher
Allwin21Watch on YouTubePlate 03Tegal 901e Tegal 903e Tegal 901e TTW Tegal 903e TTW Plasma Etch Semiconductor Equipment
Peter ChenWatch on YouTubePlate 04Allwin21 AW-901eR AW903eR Plasma Etcher RIE equipment, Reactive Ion Etching, -Tegal 901e Tegal 903e
Allwin21Watch on YouTubePlate 05AW-90XeR Plasma Etcher (Upgraded Tegal 901e, Tegal 903e)
Allwin21Watch on YouTubePlate 06Tegal 901e Tegal 903e Dry Plasma Etcher RIE semiconductor equipment
SemiStarWatch on YouTube
Wafer size
75 mm to 150 mm round substrates; rectangular substrates from 100 mm to 125 mm on a side
Introduced
2000
Node / era
down to 0.5 micron
What it is
How it works
Where it fits in the process flow
Etching is a key process repeated multiple times during the production of integrated circuits.[2]
The Tegal 901e system delivers highly reliable, repeatable results in etching a variety of films used to manufacture semiconductors, telecommunications and optoelectronic devices, flat panel displays and thin film magnetic heads.[1]
Applications
The Tegal 901e is used for etching Gallium Arsenide (GaAs) devices used in wireless communication products such as cellular telephones.[2]
The Tegal 901e system can etch devices on flexible, flat panel displays for high-capacity, portable electronic devices.[1]
The Tegal 901e can be used to etch polysilicon devices.[4]
Typical semiconductor industry applications for the Tegal 901e include LOCOS nitride etch, nitride contact/via etch (GaAs), zero layer etch, backside etch, isotropic oxide etch, photoresist descum, non-critical polysilicon etch and titanium/tantalum alloy etch.[1]
The Tegal 901e is suited for technology design rules down to 0.5 micron.[1]
- GaAs device etching
- LOCOS nitride etch
- nitride contact/via etch
- zero layer etch
- backside etch
- isotropic oxide etch
- photoresist descum
- non-critical polysilicon etch
- titanium/tantalum alloy etch
- polysilicon etching
- oxide etching
What do the numbers mean?
Power & electrical1
Wafer handling5
Configuration & options5
What does it need to run?
Site utility requirements, footprint, and infrastructure needed to install and operate this tool. Sourced from public records.
- PhasePower Requirements 230 V 16.0 A 50/60 Hz 1 Phase[3]
Where are the manuals?
Generated from public-source data on file. Enter your email to access — nothing is published; details are routed privately.
Not publicly documented
Field notes
No research found yet — worked with this tool? Share what you know.
Frequently asked questions
What type of etch does this class of system perform?General reference — not yet source-verified
Machines of this class perform dry etching, which uses a plasma to remove material in a controlled, directional manner, typically without the need for wet chemical baths.
Is this class of system suitable for both dielectric and metal etching?General reference — not yet source-verified
Yes, depending on the process gas chemistry and chamber design, such systems can be configured to etch a wide variety of materials including dielectrics, metals, and semiconductors.
How does the system achieve anisotropic etching?General reference — not yet source-verified
Anisotropic etching is achieved by applying a radio-frequency bias to the wafer platen, which creates a directional electric field that accelerates ions vertically, resulting in straight sidewalls and minimal undercut.
What typical maintenance is required for this class of equipment?General reference — not yet source-verified
Regular maintenance includes cleaning of chamber walls, replacement of consumable parts such as focus rings and electrodes, and periodic calibration of gas flows and pressure sensors to ensure process repeatability.
Can this system handle compound semiconductor wafers?General reference — not yet source-verified
Yes, with appropriate gas chemistries (e.g., chlorine- or fluorine-based) and temperature control, such systems are commonly used for etching compound semiconductors like gallium arsenide or indium phosphide.
Not publicly documented
The following facts about the 901e are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.
No publicly documented production dates or lifecycle milestones (introduction, end of production, EOL) for the 901e are on record.
Answerable by: OEM historical records or a trade-press announcement
No publicly documented variants, configuration options, or revision breakpoints of the 901e are on record.
Answerable by: an OEM product catalog or an engineer who ordered or specified the tool
The control-system platform and OS era of the 901e are not on record.
Answerable by: an engineer who operated it or OEM installation records
No publicly documented failure modes or field errata for the 901e are on record.
Answerable by: a field service engineer, process engineer, or maintenance technician
No publicly documented compatible parts, consumables, or accessories for the 901e are on record.
Answerable by: an OEM parts catalog or a service engineer
No research found yet — worked with this tool? Share what you know.
Sources & citations
Sources (4)Every fact above is drawn from these public sources
- [1]web.archive.org — web.archive.orgweb.archive.org
- [2]web.archive.org — web.archive.orgweb.archive.org
- [3]dealer listingwotol.com
- [4]TEGAL RECEIVES ORDER FOR 900 SERIES ETCH SYSTEMS FROM OPTO TECH — web.archive.orgweb.archive.org
Last updated Oct 7, 2026.
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