Comparison ledger
SPTS Sigma, SPTS Sigma FxP, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | SigmaSPTS | Sigma FxPSPTS |
|---|---|---|
| OEM | SPTS | SPTS |
| Category | Deposition | Deposition |
| Wafer size | A 1KW lamp for wafer heating | Mk1 3 KW lamp (provide wafer heating) |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | 2010– |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | SPTS Sigma | SPTS Sigma |
| Specifications | ||
| Configuration | Beta System[1] | Includes:[2] |
| Phase | Power Box (415 VAC, 3 Phase)[1] | Power Box (415 VAC, 3 Phase)[2] |
| Station 1 | Vacuum Cassette Handler (VCH)[1] | Vacuum Cassette Handler (VCH)[2] |
| Station 2 | Pre Heat Chambers[1] | Pre Heat Chamber[2] |
| Wafer size | A 1KW lamp for wafer heating[1] | Mk1 3 KW lamp (provide wafer heating)[3] |
| Station 3 | Aluminum Dep Chamber[1] | W Dep Chamber[2] |
| Model | Sigma[1] | — |
| Make | SPTS / STS[1] | — |
| Type | PVD (Physical Vapor Deposition)[1] | — |
| System configuration | Beta System[1] | — |
| Power box | 415 VAC, 3 Phase[1] | — |
| Process station 2 | Pre Heat Chambers[1] | — |
| Wafer heating | A 1KW lamp for wafer heating[1] | — |
| Process station 3 | Aluminum Dep Chamber[1] | — |
| Aluminum target | Al/0.5% Cu[1] | — |
| Process station 4 | Ti/TiN Dep chamber[1] | — |
| Titanium target | Ti 4N5[1] | — |
| Process station 5 | Soft Sputter Etch chamber[1] | — |
| Base pressure | 7E-8 Torr[1] | — |
| Station 4 RF generator | Advanced energy RFX-600 13.56 MHz RF generator[1] | — |
| Station 5 RF generator | Advanced energy RFX-600 A 13.56 MHz RF generator[1] | — |
| Station 4 | Ti/TiN Dep chamber[1] | Ti / TiN Dep chamber with titanium target (Ti 4N5), MDX II Advanced Energy 15 KW DC power supply, standard speed magnetron drive assembly, platen temp 40°C, onboard CTI 8F cryo pump model 8116065 G 001, argon delivery through a 300 sccm N2 calibrated MFC, nitrogen delivery through a 300 sccm N2 calibrated MFC, Advanced Energy RFX-600 13.56 MHz RF generator, base pressure <7E-8 Torr[2] |
| Station 5 | Soft Sputter Etch chamber[1] | Soft Sputter Etch Chamber with Advanced Energy RFX-600 13.56 MHz RF generator for platen RF, Aviza LF24 350 KHz RF generator for coil RF, argon delivery through 30 sccm N2 calibrated MFC, onboard CTI 8F cryo pump model 8116065 G 001, Aviza Silicon oil chiller to control wafer temp on the pedestal, base pressure <7-8 Torr[2] |
| Station 6 | Vacuum Cassette Handler (VCH)[1] | Vacuum Cassette Handler (VCH)[2] |
| Station 3 target | Aluminium target - Al/0.5% Cu[1] | — |
| Station 4 target | Titanium target - Ti 4N5[1] | — |
| Wafer | — | 8" compatible[2] |
| Process type | — | PVD (Physical Vapor Deposition)[2] |
| Category | — | Deposition[3] |
| Power Box | — | 415 VAC, 3 Phase[2] |
| Power supplies | — | PSU Power Supplies[2] |
| Vacuum / pumping | — | Cryo Compressors[3] |
| Temperature | — | Platen temperature 40°C[2] |
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