Comparison ledger
Applied Materials 0010 47763, Tegal 901e, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 0010 47763Applied Materials | 901eTegal |
|---|---|---|
| OEM | Applied Materials | Tegal |
| Category | Etch | Etch |
| Wafer size | — | 75 mm to 150 mm round substrates; rectangular substrates from 100 mm to 125 mm on a side |
| Process node | — | down to 0.5 micron |
| Introduced | — | 2000 |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | 900 Series |
| Family | Applied Materials 0010 47763 | Tegal 901e |
| Specifications | ||
| Configuration | 2nd Source New[1] | — |
| Type | Monopolar Dual Heated[2] | diode plasma etcher[4] |
| Description | ASSY, ESC, BONDED, MONOPOLAR DUAL HEATED[3] | — |
| Possible Materials | Al2O3 (aluminum oxide) or AlN (aluminum nitride)[2] | — |
| Model | 0010-47763[1] | — |
| OEM | Applied Materials[1] | — |
| Material (possible) | Al2O3 (aluminum oxide) or AlN (aluminum nitride)[2] | — |
| Application | Fixing wafers in etching process (PVD, CVD, ETCH)[2] | — |
| Quantity available (source) | 1[2] | — |
| Fixed electrode gap | — | 38 mm[4] |
| Round substrate handling | — | 75 mm to 150 mm round silicon and GaAs substrates[4] |
| Rectangular substrate handling | — | rectangular substrates from 100 mm to 125 mm on a side[4] |
| Design-rule suitability | — | best suited for technology design rules down to 0.5 micron[4] |
| Electrode gap | — | 38 mm fixed[4] |
| Round substrate size | — | 75 mm to 150 mm[4] |
| Rectangular substrate size | — | 100 mm to 125 mm on a side[4] |
| Best suited design rules | — | Down to 0.5 micron[4] |
| Wafer size | — | Wafer Size Range[5] |
| Phase | — | Power Requirements 230 V 16.0 A 50/60 Hz 1 Phase[5] |
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