Comparison ledger
ASML PAS 5500 300 C DUV, EV Group 101, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 101EV Group | |
|---|---|---|
| OEM | ASML | EV Group |
| Category | Lithography | Lithography |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | ASML PAS 5500 | EV Group 101 |
| Cited variants |
| — |
| Specifications | ||
| Configuration | Can be configured for 3" - 6"[1] | — |
| OEM | ASML[1] | EV Group[3] |
| Model | PAS 5500 / 300 C[1] | 101[3] |
| Tool type | DUV Stepper (Deep Ultraviolet)[1] | — |
| Wafer sizes | 8 inch[1] | — |
| Exposure wavelength | 248 nm[2] | — |
| Lens column | DUV (248nm), 0.63 N.A.[2] | — |
| Reduction | 4:1[2] | — |
| Exposure field size | up to 22 mm square[2] | — |
| Minimum feature size | <0.20 µm[2] | — |
| Wafer size range | 3 inch up to 200 mm[2] | — |
| Alignment | Registered alignment is typically <0.045 µm, even when using backside alignment[2] | — |
| Mask size | 6 inch x 0.250 inch thick quartz masks[2] | — |
| Stage motion | laser-controlled stage motion[2] | — |
| Illumination | programmable annular illumination modes[2] | — |
| Backside alignment | 3D-Align backside alignment[2] | — |
| Exposure Wavelength | 248nm (DUV)[2] | — |
| Lens Numerical Aperture | 0.63 - 0.40 variable[2] | — |
| Reduction Ratio | 4:1[2] | — |
| Exposure Field Size | 22 mm x 22 mm[2] | — |
| Wafer Size Range | 3" up to 200mm[2] | — |
| Registered Algnment | Typically <0.045 µm[2] | — |
| Mask Size | 6" x0.250"- thick quartz masks[2] | — |
| Laser Source | Cymr 5600 Laser[1] | — |
| Wafter Size (from listing) | 8 inch[1] | — |
| Vintage Year | 1996[1] | — |
| Equipment name | — | EVG 101 Spray Coater[3] |
| NEMO ID | — | evgspraycoat[3] |
| Training required | — | EVG 101 Training[3] |
| Training duration | — | 1.50 hours[3] |
| Processing technique | — | Resist Spray Coat (manual)[3] |
| Cleanliness | — | "All"[3] |
| Location | — | SNF Paul G Allen L107 Cleanroom[3] |
| Wafer diameter (substrate size) | — | up to 300 mm[4] |
| Available modules | — | Spin coat / OmniSpray® / develop[4] |
| Wafer handling options | — | Bowed / warped / thin wafer handling, edge handling[4] |
| Dispense options | — | Various resist dispense pumps covering viscosities up to 52000 cP; constant pressure dispense systems; EBR / BSR / pre-wet / bowl wash / liquid priming[4] |
| Processing technique (at SNF) | — | Resist Spray Coat (manual)[5] |
| Cleanliness group (at SNF) | — | "All"[3] |
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