Waferpedia

Comparison ledger

EVG 150versusACS200

EV Group EVG 150, SUSS MicroTec ACS200, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
EVG 150EV Group
ACS200SUSS MicroTec
OEMEV GroupSUSS MicroTec
CategoryLithographyLithography
Wafer size100mm100mm
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generationi-linei-line
FamilyEV Group EVG 150SUSS MicroTec ACS200
Specifications
Tool typeModular cluster tool for coating and development of i-line photoresists[1]Modular cluster tool[2]
Loading/unloading portsTwo loading/unloading ports: one cassette for coating and one cassette for development[1]Two loading/unloading ports: one cassette for coating and one cassette for development[2]
Wafer centeringOptical wafer centering station[1]Wafer centering station[2]
Spin-coating modulesThree spin-coating modules: coater A, coater B, and coater C[1]Two spin-coating modules[2]
Coater A useLow-viscosity photoresist[1]—
Coater B useHigh-viscosity photoresist[1]—
Coater C useBottom layers[1]—
Development moduleOne development module with puddle and spray options[1]One development module with puddle and spray options[2]
Hotplates and coolplatesThree stacks of hotplates (8 in total) and coolplates (3 in total)[1]Two stacks of hotplates (9 in total) and coolplates (3 in total)[2]
HMDS primingAdditional HMDS-priming module[1]Additional HMDS-priming module[2]
RobotDual end effector robot[1]central robot feeding the individual processing modules[2]
Wafer handlingStandard SEMI-wafers of 100 mm and 150 mm diameter[1]Standard SEMI-wafers of 100 mm and 150 mm diameter[2]
Substrate typesOpaque wafers (silicon, SOI) or transparent wafers (glass, fused-silica, sapphire)[1]—
Process stability featuresAirborne molecular contamination (AMC) filter and active control of chamber and resist/developer lines temperature[1]—
Available photoresistsAZ ECI 3007, AZ ECI 3027, AZ 1512 HS, AZ nLOF 2020, AZ nLOF 2070, MC PC62E[1]—
Available bottom layersLOR 5A, LOR 15C, XHRiC-16 II[1]—
Surface preparation optionsHMDS, dehydrate, or none[1]—
Solvent clean optionsStandard or edge bead removal (EBR)[1]—
Developer chemistriesAZ 726 MIF, AZ 400K 1:3.5, AZ developer III[1]—
wafer diameter100mm and 150mm[1]—
loading/unloading portsTwo (one cassette for coating, one for development)[1]—
wafer centering stationOptical wafer centering station[1]—
spin-coating modulesThree (coater A: low-viscosity PR, coater B: high-viscosity PR, coater C: bottom layers)[1]—
development moduleOne, with both puddle and spray options[1]—
hotplatesThree stacks, 8 in total[1]—
coolplatesThree stacks, 3 in total[1]—
additional moduleHMDS-priming module[1]—
wafer typesOpaque (silicon, SOI) or transparent (glass, fused-silica, sapphire)[1]—
process enhancementAMC filter and active control of chamber and resist/developer line temperature[1]—
Wafer sizes100mm and 150mm diameter[1]—
Loading portsTwo loading/unloading ports[1]—
HotplatesThree stacks, 8 total[1]—
CoolplatesThree total[1]—
HMDS-priming moduleIncluded[1]—
Wafer typesOpaque (silicon, SOI) and transparent (glass, fused-silica, sapphire)[1]Opaque (silicon, SOI) and transparent (glass, fused-silica, sapphire)[2]
AMC filterAirborne molecular contamination filter on top[1]—
Temperature controlActive control of chamber and resist/developer lines temperature[1]—
Photoresists availableAZ ECI 3007, AZ ECI 3027, AZ 1512 HS, AZ nLOF 2020, AZ nLOF 2070, MC PC62E; bottom layers: LOR 5A, LOR 15C, XHRiC-16[1]AZ ECI 3007, AZ ECI 3027, AZ 10XT-20, AZ 10XT-60, AZ 15nXT, AZ 40XT[2]
Wafer size100mm and 150mm[1]—
Photoresist typei-line[1]i-line[2]
Process enhancementAirborne molecular contamination filter and active control of chamber and resist/developer line temperature[1]—
Priming moduleAdditional HMDS-priming module[1]—
Wafer diameter100 mm and 150 mm diameter[1]—
Process—Coating and development of i-line photoresists[2]
Supported wafer materials—Opaque wafers (silicon, SOI) and transparent wafers (glass, fused-silica, sapphire)[2]
Wafer diameter supported—100mm and 150mm (on request)[2]
Number of spin-coating modules—2[2]
Number of development modules—1[2]
Number of hotplates—9 (total across two stacks)[2]
Number of coolplates—3[2]
HMDS priming module—Yes (included)[2]
Robot model—Sankyo SC5000[2]
Voltage—400 V[3]
Phase—3 Phase[3]
Frequency—60 Hz[3]
Thermal modules—Two stacks of hotplates (9 in total) and coolplates (3 in total), including an additional HMDS-priming module[2]
Wafer material—Opaque wafers (silicon, SOI) and transparent wafers (glass, fused-silica, sapphire)[2]
Central robot—Individual processing modules are fed by a central robot[2]
Supported wafer diameters—100 mm and 150 mm diameter[2]

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Sources (3)Every fact above is drawn from these public sources
  1. [1]epfl.chepfl.ch
  2. [2]epfl.chepfl.ch
  3. [3]inventory listing