Waferpedia

Comparison ledger

1512eversus901G

Tegal 1512e, Tegal 901G, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
1512eTegal
901GTegal
OEMTegalTegal
CategoryEtchEtch
Wafer size—75 mm to 150 mm round substrates; square and rectangular substrates
Process node——
Introduced—1999
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyTegal 1512eTegal 901G
Specifications
Tool typeIndustrial RIE plasma etcher system[1]diode plasma etcher[2]
Stated configurationWith modules assembly for CI-4222[1]—
Configuration—special configuration for GaAs processing[2]
Configured features—special sensors and electrode designs[3]
Intended applications on platform—pad, zero layer, non-selective nitride, backside, planarization, oxide, nitride, poly, and III-V materials applications such as GaAs[3]
Substrate sizes on platform—75 mm to 150 mm round substrates as well as square and rectangular substrates[3]
Equipment Type—Diode plasma etcher[2]
Process—Plasma etching[2]
Substrate Size—75 mm to 150 mm round substrates; square and rectangular substrates[3]
Series—900 series[2]
Installed Base (900 Series)—More than 1,300 systems worldwide[2]

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Sources (3)Every fact above is drawn from these public sources
  1. [1]semistarcorp.comsemistarcorp.com
  2. [2]web.archive.orgweb.archive.org
  3. [3]web.archive.orgweb.archive.org