Waferpedia

ESI

3511

ESI3511
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Wafer size

100mm

Gas delivery

Oxygen, forming gas[1]

What it is

The ESI 3511 is a microwave downstream plasma asher.[1]

The ESI 3511 is a downstream plasma asher for 100 millimeter wafers in cassette loading. The tool is configured for microelectronic compatible processing and uses oxygen and forming gas chemistry.[1]

How it works

The ESI 3511 includes a heated plate with a maximum temperature of 300°C. The ESI 3511 performs high rate polymer ashing on the wafer topside only.[1]

Applications

The ESI 3511 uses oxygen and forming gas chemistry. The ESI 3511 is specified for high rate polymer ashing on wafer topsides.[1]

  • High rate polymer ashing
  • Wafer topside ashing
  • Wafer surface cleaning before subsequent processes

Why won't it start?

Documented failure modes, common issues, and field considerations.

  • Quickstick not allowed

What do the numbers mean?

Wafer handling5

Load mode
Cassette loader[1]
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Wafer size
100mm wafers ONLY[1]
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Application
High rate polymer ashing (wafer topside ONLY)[1]
Accurate?
Wafer size
100mm (cassette loader, wafers only)[1]
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Ashing capability
High-rate polymer ashing, wafer topside only[1]
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Gas & chemistry1

Chemistry
Oxygen, forming gas[1]
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Configuration & options8

Tool type
Microwave Downstream Plasma Asher[1]
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Compatibility
Microelectronic compatible equipment[1]
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Heated plate temperature
Up to 300°C[1]
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Constraint
Quickstick not allowed[1]
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Location
Zone 1[1]
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Plasma source
Microwave downstream[1]
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Heated plate temperature
Up to 300°C (clean backside required)[1]
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Restriction
Quickstick not allowed[1]
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What does it need to run?

Site utility requirements, footprint, and infrastructure needed to install and operate this tool. Sourced from public records.

  • ChemistryOxygen, forming gas[1]

Where are the manuals?

Generated from public-source data on file. Enter your email to access — nothing is published; details are routed privately.

Not publicly documented

Field notes

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Frequently asked questions

Can a microwave downstream plasma asher remove high-dose implant resist?General reference — not yet source-verified

Many such systems are designed to handle the heavily cross-linked skin that forms on resist after high-dose implantation. The combination of reactive oxygen radicals and controlled heating can effectively remove that crust. However, process parameters (temperature, gas mixture, power) must be tuned to achieve complete removal without leaving residues.

What process gases are commonly used in microwave downstream ashers?General reference — not yet source-verified

Oxygen is the primary gas for organic ashing. Fluorine‑containing additives such as CF₄ or NF₃ are sometimes introduced in small percentages to increase the strip rate or to attack certain residues. In some applications, forming gas (N₂/H₂) is used for reducing environments. The gas choice depends on the material stack and the specific residues to be removed.

What is the typical throughput of a microwave downstream plasma asher?General reference — not yet source-verified

Throughput is highly dependent on the chamber design, wafer size, and strip process recipe. In general, batch-type microwave downstream ashers can process multiple wafers simultaneously, offering moderate throughput. Single-wafer configurations provide higher process uniformity but lower wafer counts per hour. The actual throughput for a given tool is determined by its specific operating characteristics and the strip time needed for the application.

Not publicly documented

The following facts about the 3511 are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.

  • No publicly documented production dates or lifecycle milestones (introduction, end of production, EOL) for the 3511 are on record.

    Answerable by: OEM historical records or a trade-press announcement

  • No publicly documented variants, configuration options, or revision breakpoints of the 3511 are on record.

    Answerable by: an OEM product catalog or an engineer who ordered or specified the tool

  • The control-system platform and OS era of the 3511 are not on record.

    Answerable by: an engineer who operated it or OEM installation records

  • The process node or technology generation of the 3511 is not on record.

    Answerable by: an OEM datasheet or a fab qualification report

  • No publicly documented compatible parts, consumables, or accessories for the 3511 are on record.

    Answerable by: an OEM parts catalog or a service engineer

Sources & citations

Sources (3)Every fact above is drawn from these public sources
  1. [1]epfl.ch — epfl.chepfl.ch
  2. [2]Tepla 300 ‒ Center of MicroNanoTechnology CMi ‐ EPFL — epfl.chepfl.ch
  3. [3]Jelight UVO Cleaner ‒ Center of MicroNanoTechnology CMi ‐ EPFL — epfl.chepfl.ch
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Last updated Oct 3, 2026.