Lam Research
AutoEtch 490, Parts
Lam AutoEtch 490 is a plasma etch system from Lam Research. Lam AutoEtch 490 is an in-line, cassette-to-cassette, fully automated, single-wafer, double airlocked, parallel plate plasma etching system. Lam AutoEtch 490 has 6-inch capability.[1][2]
Wafer size
6-inch capability
Gas delivery
chlorine and Freon chemistries[3]
What it is
The Lam AutoEtch 490 is a plasma etching system manufactured by Lam Research. The system is designed for 6-inch wafer processing.[1][2]
How it works
The AutoEtch 490 accommodates chlorine and Freon chemistries.[3]
Applications
The AutoEtch 490 is used for etching polysilicon, silicon nitride, refractory metal silicides, and thin dielectrics. The system supports process chemistries including chlorine and Freon. Typical processes include chlorine/helium polysilicon etch, SF6/helium isotropic polysilicon etch, SF6/helium sloped nitride etch, and SF6/helium nitride etch.[3]
What do the numbers mean?
Wafer handling3
- System type
- in-line, cassette-to-cassette, fully automated, single-wafer, double airlocked, parallel plate plasma etching system[2]
Gas & chemistry1
Configuration & options13
What does it need to run?
Site utility requirements, footprint, and infrastructure needed to install and operate this tool. Sourced from public records.
- Chemistrieschlorine and Freon chemistries[3]
Where are the manuals?
Generated from public-source data on file. Enter your email to access — nothing is published; details are routed privately.
Not publicly documented
Field notes
No research found yet — worked with this tool? Share what you know.
Frequently asked questions
What chemistries can the AutoEtch 490 use?
The AutoEtch 490 accommodates chlorine and Freon chemistries.[3]
What materials can the AutoEtch 490 etch?
The AutoEtch 490 is used for etching polysilicon, silicon nitride, refractory metal silicides, and thin dielectrics.[3]
What is the typical polysilicon etch rate with chlorine chemistry?
The typical polysilicon etch rate with chlorine/helium chemistry is at least 3500 Å/min.[3]
What is the typical poly-to-oxide selectivity for the chlorine etch?
The typical poly-to-oxide selectivity for the chlorine/helium polysilicon etch is greater than 20:1.[3]
Not publicly documented
The following facts about the AutoEtch 490, Parts are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.
No publicly documented production dates or lifecycle milestones (introduction, end of production, EOL) for the AutoEtch 490, Parts are on record.
Answerable by: OEM historical records or a trade-press announcement
No publicly documented variants, configuration options, or revision breakpoints of the AutoEtch 490, Parts are on record.
Answerable by: an OEM product catalog or an engineer who ordered or specified the tool
The control-system platform and OS era of the AutoEtch 490, Parts are not on record.
Answerable by: an engineer who operated it or OEM installation records
No publicly documented failure modes or field errata for the AutoEtch 490, Parts are on record.
Answerable by: a field service engineer, process engineer, or maintenance technician
The process node or technology generation of the AutoEtch 490, Parts is not on record.
Answerable by: an OEM datasheet or a fab qualification report
No research found yet — worked with this tool? Share what you know.
Sources & citations
Sources (3)Every fact above is drawn from these public sources
- [1]dealer listingsemistarcorp.com
- [2]semistarcorp.com — semistarcorp.comsemistarcorp.com
- [3]cdn2.hubspot.net — cdn2.hubspot.netcdn2.hubspot.net
Last updated Oct 9, 2026.
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